Academic Journal
Photodetection Properties of MoS2, WS2 and MoxW1-xS2 Heterostructure: A Comparative Study
| العنوان: | Photodetection Properties of MoS2, WS2 and MoxW1-xS2 Heterostructure: A Comparative Study |
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| المؤلفون: | Al Qaydi, Maryam, Kotbi, Ahmed, Rajput, Nitul, Bouchalkha, Abdellatif, El Marssi, Mimoun, Matras, Guillaume, Kasmi, Chaouki, Jouiad, Mustapha |
| المساهمون: | Laboratoire de Physique de la Matière Condensée - UR UPJV 2081 (LPMC), Université de Picardie Jules Verne (UPJV), Technology Innovation Institute, Abu Dhabi, Laboratoire Hubert Curien (LabHC), Institut d'Optique Graduate School (IOGS)-Université Jean Monnet - Saint-Étienne (UJM)-Centre National de la Recherche Scientifique (CNRS) |
| المصدر: | ISSN: 2079-4991. |
| بيانات النشر: | CCSD MDPI |
| سنة النشر: | 2023 |
| المجموعة: | Université Jean Monnet – Saint-Etienne: HAL |
| مصطلحات موضوعية: | 2D materials, CVD growth, MoS2, MoxW1-xS2 heterostructure, WS2, photodetection, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] |
| الوصف: | International audience ; Layered transition metals dichalcogenides such as MoS2 and WS2 have shown a tunable bandgap, making them highly desirable for optoelectronic applications. Here, we report on one-step chemical vapor deposited MoS2, WS2 and MoxW1-xS2 heterostructures incorporated into photoconductive devices to be examined and compared in view of their use as potential photodetectors. Vertically aligned MoS2 nanosheets and horizontally stacked WS2 layers, and their heterostructure form MoxW1-xS2, exhibit direct and indirect bandgap, respectively. To analyze these structures, various characterization methods were used to elucidate their properties including Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectrometry and high-resolution transmission electron microscopy. While all the investigated samples show a photoresponse in a broad wavelength range between 400 nm and 700 nm, the vertical MoS2 nanosheets sample exhibits the highest performances at a low bias voltage of 5 V. Our findings demonstrate a responsivity and a specific detectivity of 47.4 mA W−1 and 1.4 × 1011 Jones, respectively, achieved by MoxW1-xS2. This study offers insights into the use of a facile elaboration technique for tuning the performance of MoxW1-xS2 heterostructure-based photodetectors. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.3390/nano13010024 |
| الاتاحة: | https://u-picardie.hal.science/hal-03936748 https://doi.org/10.3390/nano13010024 |
| رقم الانضمام: | edsbas.CAAB30EA |
| قاعدة البيانات: | BASE |
| DOI: | 10.3390/nano13010024 |
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