Academic Journal
Activation Energy of Surface Diffusion and Terrace Width Dynamics During the Growth of in (4×3) on Si (100) - (2×1) by Femtosecond Pulsed Laser Deposition
| العنوان: | Activation Energy of Surface Diffusion and Terrace Width Dynamics During the Growth of in (4×3) on Si (100) - (2×1) by Femtosecond Pulsed Laser Deposition |
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| المؤلفون: | Hafez, M. A., Elsayed-Ali, H. E. |
| المصدر: | Electrical & Computer Engineering Faculty Publications |
| بيانات النشر: | ODU Digital Commons |
| سنة النشر: | 2008 |
| المجموعة: | Old Dominion University: ODU Digital Commons |
| مصطلحات موضوعية: | Activation energy, Pulsed laser deposition, Surface diffusion, Ultrashort pulses, Equilibrium values, Intensity relaxation, Terrace width dynamics, Atomic, Molecular and Optical Physics, Electrical and Computer Engineering, Physical Chemistry, Semiconductor and Optical Materials |
| الوصف: | The nucleation and growth of indium on a vicinal Si (100) - (2×1) surface at high temperature by femtosecond pulsed laser deposition was investigated by in situ reflection high energy electron diffraction (RHEED). RHEED intensity relaxation was observed for the first ∼2 ML during the growth of In (4×3) by step flow. From the temperature dependence of the rate of relaxation, an activation energy of 1.4±0.2 eV of surface diffusion was determined. The results indicate that indium small clusters diffused to terrace step edges with a diffusion frequency constant of (1.0±0.1) × 1011 s-1. The RHEED specular beam split peak spacing, which is characteristic of a vicinal surface, was analyzed with the growth temperature to obtain the average terrace width. Gradual reduction in the terrace width during growth of In (4×3) was observed with In coverage and is attributed to the detachment of In atoms from terrace edges. At a substrate temperature of 405 °C, the average terrace width decreased from 61±10 Å, which corresponds to the vicinal Si(100) surface, to an equilibrium value of 45±7 Å after deposition of ∼23 ML. Further In coverage showed a transition of the RHEED pattern from (4×3) to (1×1) and the growth of rounded In islands (average height of ∼1 nm and width of ∼25 nm), as examined by ex situ atomic force microscopy. © 2008 American Institute of Physics. [DOI:10.1063/1.2909923] |
| نوع الوثيقة: | article in journal/newspaper |
| وصف الملف: | application/pdf |
| اللغة: | unknown |
| Relation: | https://digitalcommons.odu.edu/ece_fac_pubs/99; https://digitalcommons.odu.edu/context/ece_fac_pubs/article/1108/viewcontent/Hafez_activation.pdf |
| DOI: | 10.1063/1.2909923 |
| الاتاحة: | https://digitalcommons.odu.edu/ece_fac_pubs/99 https://doi.org/10.1063/1.2909923 https://digitalcommons.odu.edu/context/ece_fac_pubs/article/1108/viewcontent/Hafez_activation.pdf |
| رقم الانضمام: | edsbas.C99CAE74 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1063/1.2909923 |
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