Academic Journal

Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-SiC MOS Capacitors

التفاصيل البيبلوغرافية
العنوان: Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-SiC MOS Capacitors
المؤلفون: Pande, Peyush, Dimitrijev, Sima, Haasmann, Daniel, Moghadam, Hamid Amini, Tanner, Philip, Han, Jisheng
بيانات النشر: Institute of Electrical and Electronics Engineers
سنة النشر: 2018
المجموعة: Griffith University: Griffith Research Online
مصطلحات موضوعية: Electrical engineering, Electronics, sensors and digital hardware, Nanotechnology
الوصف: This brief presents direct electrical measurement of active defects in the strong-accumulation region of N-type 4H-SiC MOS capacitors, which corresponds to the strong-inversion region of N-channel MOSFETs. The results demonstrate the existence of an active defect in the gate oxide, located very close to the SiC surface, with localized energy levels between 0.13 eV and 0.23 eV above the bottom of the conduction band. The observed spatial and energy localizations indicates that this is a well-defined defect. ; Griffith Sciences, Queensland Micro and Nanotechnology Centre ; Full Text
نوع الوثيقة: article in journal/newspaper
اللغة: English
Relation: IEEE Journal of the Electron Devices Society; http://hdl.handle.net/10072/380455
DOI: 10.1109/JEDS.2018.2820729
الاتاحة: http://hdl.handle.net/10072/380455
https://doi.org/10.1109/JEDS.2018.2820729
Rights: © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. ; open access
رقم الانضمام: edsbas.C8D67A55
قاعدة البيانات: BASE
الوصف
DOI:10.1109/JEDS.2018.2820729