Academic Journal

Sputtered indium tin oxide as a recombination layer formed on the tunnel oxide/poly-Si passivating contact enabling the potential of efficient monolithic perovskite/Si tandem solar cells

التفاصيل البيبلوغرافية
العنوان: Sputtered indium tin oxide as a recombination layer formed on the tunnel oxide/poly-Si passivating contact enabling the potential of efficient monolithic perovskite/Si tandem solar cells
المؤلفون: Yoon, Woojun, Scheiman, David, Ok, Young-Woo, Song, Zhaoning, Chen, Cong, Jernigan, Glenn, Rohatgi, Ajeet, Yan, Yanfa, Jenkins, Phillip
المساهمون: Office of Naval Research
المصدر: Solar Energy Materials and Solar Cells ; volume 210, page 110482 ; ISSN 0927-0248
بيانات النشر: Elsevier BV
سنة النشر: 2020
المجموعة: ScienceDirect (Elsevier - Open Access Articles via Crossref)
نوع الوثيقة: article in journal/newspaper
اللغة: English
DOI: 10.1016/j.solmat.2020.110482
الاتاحة: http://dx.doi.org/10.1016/j.solmat.2020.110482
https://api.elsevier.com/content/article/PII:S092702482030088X?httpAccept=text/xml
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Rights: https://www.elsevier.com/tdm/userlicense/1.0/ ; http://www.elsevier.com/open-access/userlicense/1.0/
رقم الانضمام: edsbas.C68080EC
قاعدة البيانات: BASE
الوصف
DOI:10.1016/j.solmat.2020.110482