Academic Journal

Fabrication of high-speed resonant cavity enhanced schottky photodiodes

التفاصيل البيبلوغرافية
العنوان: Fabrication of high-speed resonant cavity enhanced schottky photodiodes
المؤلفون: Ozbay, E., Islam, M. S., Onat, B., Gokkavas, M., Aytur, O., Tuttle, G., Towe, E., Henderson, R. H., Unlu, M. S.
المصدر: IEEE Photonics Technology Letters
بيانات النشر: IEEE
سنة النشر: 2015
المجموعة: Bilkent University: Institutional Repository
مصطلحات موضوعية: High-speed Circuits/devices, Photodetectors, Photodiodes, Resonant Caity Enhancement, Schottky Diodes, Bandwidth, Electric Contacts, Frequency Response, Integrated Optoelectronics, Mirrors, Schottky Barrier Diodes, Semiconducting Aluminum Compounds, Semiconducting Gallium Arsenide, Semiconductor Device Manufacture, Semiconductor Device Testing, Full Width At Half Maximum (fwhm), Resonant Cavity Enhanced (rce) Schottky Photodiodes, Schottky Metal Contacts
الوصف: Cataloged from PDF version of article. ; We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode, The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In0.08Ga0.92As) and a distributed AlAs-GaAs Bragg mirror, The Schottky contact metal serves as a high-reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process, The resulting spectral photo response had a resonance around 895 nm, in good agreement with our simulations, The full-width-at-half-maximum (FWHM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental setup limited temporal response of 18 ps FWHM, corresponding to a 3-dB bandwidth of 20 GHz.
نوع الوثيقة: article in journal/newspaper
وصف الملف: application/pdf
اللغة: English
تدمد: 1041-1135
Relation: http://dx.doi.org/10.1109/68.588199; Özbay, E., Islam, M. S., Onat, B., Gökkavas, M., Aytür, O., Tuttle, G., . & Ünlü, M. S. (1997). Fabrication of high-speed resonant cavity enhanced Schottky photodiodes. Photonics Technology Letters, IEEE, 9(5), 672-674.; http://hdl.handle.net/11693/11037
DOI: 10.1109/68.588199
الاتاحة: http://hdl.handle.net/11693/11037
https://doi.org/10.1109/68.588199
Rights: Copyright © 1995 IEEE
رقم الانضمام: edsbas.C3F37D94
قاعدة البيانات: BASE
الوصف
تدمد:10411135
DOI:10.1109/68.588199