Academic Journal
Fabrication of high-speed resonant cavity enhanced schottky photodiodes
العنوان: | Fabrication of high-speed resonant cavity enhanced schottky photodiodes |
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المؤلفون: | Ozbay, E., Islam, M. S., Onat, B., Gokkavas, M., Aytur, O., Tuttle, G., Towe, E., Henderson, R. H., Unlu, M. S. |
المصدر: | IEEE Photonics Technology Letters |
بيانات النشر: | IEEE |
سنة النشر: | 2015 |
المجموعة: | Bilkent University: Institutional Repository |
مصطلحات موضوعية: | High-speed Circuits/devices, Photodetectors, Photodiodes, Resonant Caity Enhancement, Schottky Diodes, Bandwidth, Electric Contacts, Frequency Response, Integrated Optoelectronics, Mirrors, Schottky Barrier Diodes, Semiconducting Aluminum Compounds, Semiconducting Gallium Arsenide, Semiconductor Device Manufacture, Semiconductor Device Testing, Full Width At Half Maximum (fwhm), Resonant Cavity Enhanced (rce) Schottky Photodiodes, Schottky Metal Contacts |
الوصف: | Cataloged from PDF version of article. ; We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode, The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In0.08Ga0.92As) and a distributed AlAs-GaAs Bragg mirror, The Schottky contact metal serves as a high-reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process, The resulting spectral photo response had a resonance around 895 nm, in good agreement with our simulations, The full-width-at-half-maximum (FWHM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental setup limited temporal response of 18 ps FWHM, corresponding to a 3-dB bandwidth of 20 GHz. |
نوع الوثيقة: | article in journal/newspaper |
وصف الملف: | application/pdf |
اللغة: | English |
تدمد: | 1041-1135 |
Relation: | http://dx.doi.org/10.1109/68.588199; Özbay, E., Islam, M. S., Onat, B., Gökkavas, M., Aytür, O., Tuttle, G., . & Ünlü, M. S. (1997). Fabrication of high-speed resonant cavity enhanced Schottky photodiodes. Photonics Technology Letters, IEEE, 9(5), 672-674.; http://hdl.handle.net/11693/11037 |
DOI: | 10.1109/68.588199 |
الاتاحة: | http://hdl.handle.net/11693/11037 https://doi.org/10.1109/68.588199 |
Rights: | Copyright © 1995 IEEE |
رقم الانضمام: | edsbas.C3F37D94 |
قاعدة البيانات: | BASE |
تدمد: | 10411135 |
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DOI: | 10.1109/68.588199 |