Academic Journal
Deep-Level Defects in Electron Irradiated 6H-SiC
| العنوان: | Deep-Level Defects in Electron Irradiated 6H-SiC |
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| المؤلفون: | Kozubal, Michal Sebastian, Kaminski, Pawel, Warchol, Stanislaw, Racka-Dzietko, Katarzyna, Grasza, Krzysztof, Tymicki, Emil |
| المصدر: | MRS Proceedings ; volume 1246 ; ISSN 0272-9172 1946-4274 |
| بيانات النشر: | Springer Science and Business Media LLC |
| سنة النشر: | 2010 |
| الوصف: | An effect of electron irradiation on the concentrations of deep-level centers in C-rich and Si-rich 6H-SiC wafers is investigated. In the former material, the main deep-level centers with activation energies of E c -0.50, E c -0.64 and E c -0.67 eV are found to be related to dicarbon interstitials and C i N C complexes located in hexagonal and quasi-cubic lattice sites, respectively. In the latter material, the dicarbon interstitials are dominant after the irradiation with 1.5-MeV electrons. At the energy of bombarding electrons equal to 0.3 and 0.7 MeV, the activation energies of the dominant deep-level centers are E c -0.38 and E c -0.52 eV, respectively. The first center is related to carbon vacancies and the second to silicon interstitials. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1557/proc-1246-b05-03 |
| الاتاحة: | http://dx.doi.org/10.1557/proc-1246-b05-03 https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400001731 |
| Rights: | https://www.cambridge.org/core/terms |
| رقم الانضمام: | edsbas.C0D42FE0 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1557/proc-1246-b05-03 |
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