Academic Journal
Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition
| العنوان: | Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition |
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| المؤلفون: | Macht, L., Weyher, J. L., Grzegorczyk, A., Larsen, P. K. |
| المصدر: | Physical Review B ; volume 71, issue 7 ; ISSN 1098-0121 1550-235X |
| بيانات النشر: | American Physical Society (APS) |
| سنة النشر: | 2005 |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1103/physrevb.71.073309 |
| DOI: | 10.1103/PhysRevB.71.073309 |
| DOI: | 10.1103/PhysRevB.71.073309/fulltext |
| الاتاحة: | http://dx.doi.org/10.1103/physrevb.71.073309 http://link.aps.org/article/10.1103/PhysRevB.71.073309 http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.073309/fulltext |
| Rights: | http://link.aps.org/licenses/aps-default-license |
| رقم الانضمام: | edsbas.C01D6DE7 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1103/physrevb.71.073309 |
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