التفاصيل البيبلوغرافية
| العنوان: |
Role of cyclic process in the initial stage of diamond deposition during bias enhanced nucleation |
| المؤلفون: |
Hayashi, Y., 16090, Matsushita, Y., 16876, Soga, Tetsuo, 曾我, 哲夫, 1000020197007, ソガ, テツオ, Umeno, Masayoshi, Jimbo, Takashi |
| بيانات النشر: |
American Institute of Physics |
| سنة النشر: |
2002 |
| المجموعة: |
Nagoya Institute of Technology Repository System |
| الوصف: |
The initial nucleation of diamond film on a Si substrate, deposited by a three-step growth process together with a cycle bias enhanced nucleation (BEN) growth/H2 plasma etching technique in a microwave plasma enhanced chemical vapor deposition system has been investigated by atomic force microscopy, Raman spectroscopy and x-ray photoelectron spectroscopy. The surface morphology and the uniformity of {100}-oriented textured grains at the BEN step were found to be greatly increased by applying the cyclic process with some optimal H2 plasma etching time during the BEN stage. ; application/pdf ; journal article |
| نوع الوثيقة: |
other/unknown material |
| وصف الملف: |
application/pdf |
| اللغة: |
English |
| تدمد: |
00218979 |
| Relation: |
http://dx.doi.org/10.1063/1.1480116; JOURNAL OF APPLIED PHYSICS; 12; 91; 9752; 9756; AA00693547; https://nitech.repo.nii.ac.jp/record/5064/files/JAP 91_9752.pdf; https://nitech.repo.nii.ac.jp/records/5064 |
| الاتاحة: |
https://nitech.repo.nii.ac.jp/record/5064/files/JAP 91_9752.pdf
https://nitech.repo.nii.ac.jp/records/5064 |
| رقم الانضمام: |
edsbas.BC48913D |
| قاعدة البيانات: |
BASE |