Academic Journal
Effects of the Substrate Temperature, Annealing Temperature, and Hydrogen Presence During Sputtering on the Luminescence of Eu-Doped Nanocrystalline Si/SiO 2
| العنوان: | Effects of the Substrate Temperature, Annealing Temperature, and Hydrogen Presence During Sputtering on the Luminescence of Eu-Doped Nanocrystalline Si/SiO 2 |
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| المؤلفون: | Nery, G. A., Fonseca, L. F., Liu, H., Resto, O., Weisz, S. Z. |
| المصدر: | MRS Proceedings ; volume 638 ; ISSN 0272-9172 1946-4274 |
| بيانات النشر: | Springer Science and Business Media LLC |
| سنة النشر: | 2000 |
| الوصف: | We synthesized RF co-sputtered Eu 2 O 3 , Si and SiO 2 on quartz substrates at different temperatures, and with and without the presence of H 2 gas during sputtering. The photoluminescence of the samples was measured using both the 514.5nm green line and 457.9nm blue line of an Ar laser. The samples were then annealed, their luminescence remeasured, and the process repeated for a range of temperatures from 470°C to 1084°C. The effects of substrate temperature, presence or absence of H 2 , annealing, and the use of the green or blue line on the observed luminescence are presented. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1557/proc-638-f14.27.1 |
| الاتاحة: | http://dx.doi.org/10.1557/proc-638-f14.27.1 https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400599588 |
| Rights: | https://www.cambridge.org/core/terms |
| رقم الانضمام: | edsbas.BA9B27C9 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1557/proc-638-f14.27.1 |
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