Academic Journal
Studying Thin Ge films and Ge/GeO2 interfaces by means of raman–brillouin scattering
| العنوان: | Studying Thin Ge films and Ge/GeO2 interfaces by means of raman–brillouin scattering |
|---|---|
| المؤلفون: | Yaacoub, Lama, Schamm-Chardon, Sylvie, Ovsyuk, N.N., Zwick, Antoine, Groenen, Jesse |
| المساهمون: | Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Sobolev Institute of Geology and Mineralogy Novosibirsk, Siberian Branch of the Russian Academy of Sciences (SB RAS), Matériaux Multi-fonctionnels et Multi-échelles (CEMES-M3) |
| المصدر: | ISSN: 1062-8738. |
| بيانات النشر: | HAL CCSD Springer Verlag/Russian Academy of Sciences (RAS) |
| سنة النشر: | 2015 |
| المجموعة: | Université Toulouse III - Paul Sabatier: HAL-UPS |
| مصطلحات موضوعية: | Brillouin scattering, Electromagnetic wave emission, Germanium, Phonons, Thermodynamic stability, Acoustic phonons, Ge surfaces, High frequency acoustics, Interfacial region, Native oxide layer, Photoelastic models, Sub nanometers, Thermal instabilities, Acoustic wave scattering, [PHYS]Physics [physics] |
| الوصف: | cited By 0 ; International audience ; The high frequency acoustic phonons employed in Raman–Brillouin scattering are used to probe native oxide layers on Ge film surfaces in GeO2/Ge/InxGa1–xAs heterostructures. The thermal instability of GeO2 results in the production of GeO gas on Ge surfaces; molecules of this gas evaporate through the porous GeO2 layers. As a result, the Ge/GeO2 interface is depleted of Ge, and a sub-stoichiometric GeOx layer is formed. By comparing photoelastic modeling and experimental results, we discovered a 0.5 nm thick interfacial region between the film and the oxide, demonstrating the sensitivity of acoustic phonons to the subnanometer scale. © 2015, Allerton Press, Inc. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| Relation: | hal-01720450; https://hal.science/hal-01720450 |
| DOI: | 10.3103/S1062873815110246 |
| الاتاحة: | https://hal.science/hal-01720450 https://doi.org/10.3103/S1062873815110246 |
| رقم الانضمام: | edsbas.BA7E1094 |
| قاعدة البيانات: | BASE |
| DOI: | 10.3103/S1062873815110246 |
|---|