Academic Journal

Integration of MoS 2 with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

التفاصيل البيبلوغرافية
العنوان: Integration of MoS 2 with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands
المؤلفون: Deng, Jianan, Zong, Lingyi, Bao, Wenzhong, Zhu, Mingsai, Liao, Fuyou, Guo, Zhongxun, Xie, Yuying, Lu, Bingrui, Wan, Jing, Zhu, Jiahe, Peng, Ruwen, Chen, Yifang
المساهمون: National Natural Science Foundation of China, National Basic Research Program of China
المصدر: Advanced Optical Materials ; volume 7, issue 23 ; ISSN 2195-1071 2195-1071
بيانات النشر: Wiley
سنة النشر: 2019
المجموعة: Wiley Online Library (Open Access Articles via Crossref)
الوصف: At present, dual‐channel or even multi‐channel recording is a developing trend in the field of photodetection, which is widely applied in environment protection, security, and space science and technology. This paper proposes a novel MoS 2 /InAlAs/InGaAs n–i–n heterojunction phototransistor by integrating multi‐layered MoS 2 with InGaAs‐based high electron mobility transistors (InGaAs‐HEMTs). Due to the internal photocurrent amplification in the InGaAs channels with a narrow energy bandgap of 0.79 eV, this device exhibits high photoresponsivity ( R ) of over 8 × 10 5 A W –1 under near‐infrared illumination of 1550 nm at 500 pW. Furthermore, with the combination of the photoconductance effect in the vertical MoS 2 /InAlAs/InGaAs n–i–n heterojunction and the photogating effect in the lateral phototransistor, this device possesses a unique characteristic under visible illumination that its photoresponsivity can be tuned by the top gate electrode from 6 × 10 5 A W –1 to ‐4 × 10 5 A W –1 by gate voltage. This may lead to a new application as an optically controlled electronic inverter, which needs further study in depth. This MoS 2 /InAlAs/InGaAs phototransistor builds up a new bridge between 2D materials and conventional ternary compounded semiconductor devices.
نوع الوثيقة: article in journal/newspaper
اللغة: English
DOI: 10.1002/adom.201901039
الاتاحة: http://dx.doi.org/10.1002/adom.201901039
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رقم الانضمام: edsbas.BA7203F4
قاعدة البيانات: BASE