Academic Journal
Dissolution of donor-vacancy clusters in heavily doped n-type germanium
العنوان: | Dissolution of donor-vacancy clusters in heavily doped n-type germanium |
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المؤلفون: | Slawomir Prucnal, Maciej O Liedke, Xiaoshuang Wang, Maik Butterling, Matthias Posselt, Joachim Knoch, Horst Windgassen, Eric Hirschmann, Yonder Berencén, Lars Rebohle, Mao Wang, Enrico Napolitani, Jacopo Frigerio, Andrea Ballabio, Giovani Isella, René Hübner, Andreas Wagner, Hartmut Bracht, Manfred Helm, Shengqiang Zhou |
المصدر: | New Journal of Physics, Vol 22, Iss 12, p 123036 (2020) |
بيانات النشر: | IOP Publishing |
سنة النشر: | 2020 |
المجموعة: | Directory of Open Access Journals: DOAJ Articles |
مصطلحات موضوعية: | germanium, vacancies, doping, positron annihilation lifetime spectroscopy, flash lamp annealing, Science, Physics, QC1-999 |
الوصف: | The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (D _n V with n ⩽ 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P _4 V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P _4 V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance–voltage measurements in conjunction with secondary ion mass spectrometry, positron annihilation lifetime spectroscopy and theoretical calculations enabled us to address and understand a fundamental problem that has hindered so far the full integration of Ge with complementary-metal-oxide-semiconductor technology. |
نوع الوثيقة: | article in journal/newspaper |
اللغة: | English |
تدمد: | 1367-2630 |
Relation: | https://doi.org/10.1088/1367-2630/abc466; https://doaj.org/toc/1367-2630; https://doaj.org/article/f64db16d864945078b3035d039906df9 |
DOI: | 10.1088/1367-2630/abc466 |
الاتاحة: | https://doi.org/10.1088/1367-2630/abc466 https://doaj.org/article/f64db16d864945078b3035d039906df9 |
رقم الانضمام: | edsbas.BA0371F2 |
قاعدة البيانات: | BASE |
تدمد: | 13672630 |
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DOI: | 10.1088/1367-2630/abc466 |