Academic Journal

Dissolution of donor-vacancy clusters in heavily doped n-type germanium

التفاصيل البيبلوغرافية
العنوان: Dissolution of donor-vacancy clusters in heavily doped n-type germanium
المؤلفون: Slawomir Prucnal, Maciej O Liedke, Xiaoshuang Wang, Maik Butterling, Matthias Posselt, Joachim Knoch, Horst Windgassen, Eric Hirschmann, Yonder Berencén, Lars Rebohle, Mao Wang, Enrico Napolitani, Jacopo Frigerio, Andrea Ballabio, Giovani Isella, René Hübner, Andreas Wagner, Hartmut Bracht, Manfred Helm, Shengqiang Zhou
المصدر: New Journal of Physics, Vol 22, Iss 12, p 123036 (2020)
بيانات النشر: IOP Publishing
سنة النشر: 2020
المجموعة: Directory of Open Access Journals: DOAJ Articles
مصطلحات موضوعية: germanium, vacancies, doping, positron annihilation lifetime spectroscopy, flash lamp annealing, Science, Physics, QC1-999
الوصف: The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (D _n V with n ⩽ 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P _4 V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P _4 V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance–voltage measurements in conjunction with secondary ion mass spectrometry, positron annihilation lifetime spectroscopy and theoretical calculations enabled us to address and understand a fundamental problem that has hindered so far the full integration of Ge with complementary-metal-oxide-semiconductor technology.
نوع الوثيقة: article in journal/newspaper
اللغة: English
تدمد: 1367-2630
Relation: https://doi.org/10.1088/1367-2630/abc466; https://doaj.org/toc/1367-2630; https://doaj.org/article/f64db16d864945078b3035d039906df9
DOI: 10.1088/1367-2630/abc466
الاتاحة: https://doi.org/10.1088/1367-2630/abc466
https://doaj.org/article/f64db16d864945078b3035d039906df9
رقم الانضمام: edsbas.BA0371F2
قاعدة البيانات: BASE
الوصف
تدمد:13672630
DOI:10.1088/1367-2630/abc466