Academic Journal
Highly Conductive Ultrafine N‑Doped Silicon Powders Prepared by High-Frequency Thermal Plasma and Their Application as Anodes for Lithium-Ion Batteries
| العنوان: | Highly Conductive Ultrafine N‑Doped Silicon Powders Prepared by High-Frequency Thermal Plasma and Their Application as Anodes for Lithium-Ion Batteries |
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| المؤلفون: | Yuanjiang Dong, Chang Liu, Fei Li, Huacheng Jin, Baoqiang Li, Fei Ding, Yijun Yang, Zongxian Yang, Fangli Yuan |
| سنة النشر: | 2023 |
| مصطلحات موضوعية: | Medicine, Neuroscience, Physiology, Immunology, Developmental Biology, Mental Health, Environmental Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, violent volume expansion, uv – vis, single step without, raised carrier concentration, notably narrower bandgap, experimental results showed, better cycle stability, alleviated volume expansion, accelerated electron transfer, ray photoelectron spectroscopy, initial coulombic efficiency, flow rate increased, 4 , 3 , frequency thermal plasma, enhanced electrochemical performances, si without doping, 2 , n – si, doped silicon powders |
| الوصف: | Silicon materials are widely regarded as highly promising candidate anodes for the next generation of lithium-ion batteries. However, the violent volume expansion and low intrinsic conductivity hinder their practical application. In this study, ultrafine N-doped silicon powders (N-doped Si) were prepared by using high-frequency thermal plasma (HF-plasma) technology, in which nanocrystallization and N doping were conducted in a single step without the formation of the Si 3 N 4 phase. Through characterization of X-ray photoelectron spectroscopy, X-ray diffraction, and Raman analysis, it is ascertained that N is doped in silicon after HF-plasma treatment. According to the UV–vis and conductivity tests, N-doped Si has a notably narrower bandgap and a higher conductivity than those of undoped Si. N-doped Si with a submicrosphere (N–Si-0.5) delivered a reversible capacity of 974.1 mA h g –1 at 0.2 A g –1 after 50 cycles and an initial Coulombic efficiency (ICE) of 88.72%. Even at 6 A g –1 , N–Si-0.5 can still exhibit a high reversible capacity of 200.5 mA h g –1 , while Si without doping (N–Si-0.0) only gives a reversible capacity of 526.8 mA h g –1 at 0.2 A g –1 after 50 cycles with an ICE of 85.81% and an unnoticeable capacity at 6 A g –1 . It is clear that Si shows higher ICE, better cycle stability, and rate performance. For further enhancement of the electrochemical performances of N-doped Si, the Si nanowires (NW-Si) were prepared. Experimental results showed that the initial capacity, ICE, and rate performance all gradually improved as the N 2 flow rate increased. NW-Si-1.0 has an initial capacity of 2725.7 mA h g –1 and an ICE of 80.18%. Even at 6 A g –1 , it can provide a reversible capacity of 584.7 mA h g –1 . The enhanced electrochemical performances of N-doped Si can be ascribed to the introduction of the N dopant and nanowire, which raised carrier concentration, accelerated electron transfer, and alleviated volume expansion. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| Relation: | https://figshare.com/articles/journal_contribution/Highly_Conductive_Ultrafine_N_Doped_Silicon_Powders_Prepared_by_High-Frequency_Thermal_Plasma_and_Their_Application_as_Anodes_for_Lithium-Ion_Batteries/24796512 |
| DOI: | 10.1021/acsaelm.3c01376.s001 |
| الاتاحة: | https://doi.org/10.1021/acsaelm.3c01376.s001 https://figshare.com/articles/journal_contribution/Highly_Conductive_Ultrafine_N_Doped_Silicon_Powders_Prepared_by_High-Frequency_Thermal_Plasma_and_Their_Application_as_Anodes_for_Lithium-Ion_Batteries/24796512 |
| Rights: | CC BY-NC 4.0 |
| رقم الانضمام: | edsbas.B82A1A67 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1021/acsaelm.3c01376.s001 |
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