Academic Journal
Impact of band-bending on the k-resolved electronic structure of Si-doped GaN
| العنوان: | Impact of band-bending on the k-resolved electronic structure of Si-doped GaN |
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| المؤلفون: | Lev, L. L., Maiboroda, I. O., Grichuk, E. S., Chumakov, N. K., Schröter, N. B. M., Husanu, M.-A., Schmitt, T., Aeppli, G., Zanaveskin, M. L., Valeyev, V. G., Strocov, V. N. |
| المساهمون: | Russian Foundation for Basic Research, Microsoft Station Q Program |
| المصدر: | Physical Review Research ; volume 4, issue 1 ; ISSN 2643-1564 |
| بيانات النشر: | American Physical Society (APS) |
| سنة النشر: | 2022 |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1103/physrevresearch.4.013183 |
| DOI: | 10.1103/PhysRevResearch.4.013183 |
| DOI: | 10.1103/PhysRevResearch.4.013183/fulltext |
| الاتاحة: | http://dx.doi.org/10.1103/physrevresearch.4.013183 https://link.aps.org/article/10.1103/PhysRevResearch.4.013183 http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevResearch.4.013183/fulltext |
| Rights: | https://creativecommons.org/licenses/by/4.0/ |
| رقم الانضمام: | edsbas.B6E01A2F |
| قاعدة البيانات: | BASE |
| DOI: | 10.1103/physrevresearch.4.013183 |
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