Conference
InP Lattice-Matched HEMT with Regrown Source/Drain by MOCVD
| العنوان: | InP Lattice-Matched HEMT with Regrown Source/Drain by MOCVD |
|---|---|
| المؤلفون: | Li, Qiang, Li, Ming, Tang, Chak Wah, Lau, Kei May |
| سنة النشر: | 2011 |
| المجموعة: | The Hong Kong University of Science and Technology: HKUST Institutional Repository |
| مصطلحات موضوعية: | Gate-length, InAlAs/InGaAs, InP, InP substrates, Lattice-matched, Layered Structures, Maximum oscillation frequency, RF performance |
| الوصف: | In this paper, we report the incorporation of Source/Drain regrowth by MOCVD in InAlAs/InGaAs HEMT on InP substrate. Greatly improved RF performance of the device was observed, compared with standard HEMTs with the same layered structure. 1-μm gate-length device exhibits a 34% improvement of cutoff frequency fT and a 74% improvement of maximum oscillation frequency fmax. © VDE VERLAG GMBH. |
| نوع الوثيقة: | conference object |
| اللغة: | English |
| تدمد: | 1092-8669 |
| Relation: | http://repository.ust.hk/ir/Record/1783.1-33254; International Conference on Indium Phosphide and Related Materials, Berlin, Germany, 2011, article number 5978339; http://www.scopus.com/record/display.url?eid=2-s2.0-84863288445&origin=inward |
| الاتاحة: | http://repository.ust.hk/ir/Record/1783.1-33254 http://www.scopus.com/record/display.url?eid=2-s2.0-84863288445&origin=inward |
| رقم الانضمام: | edsbas.B40D3843 |
| قاعدة البيانات: | BASE |
| تدمد: | 10928669 |
|---|