التفاصيل البيبلوغرافية
| العنوان: |
Etching of deep macropores in 6 in. Si wafers |
| المؤلفون: |
Meerakker, JEAM van de, Elfrink, RJG, Roozeboom, F Fred, Verhoeven, JFCM |
| المصدر: |
ISSN:0013-4651. |
| سنة النشر: |
2000 |
| المجموعة: |
Eindhoven University of Technology (TU/e): Research Portal |
| الوصف: |
The process of photoanodic etching of deep pores in lightly doped n - -Si wafers was investigated. On a 6 in. wafer, more than 1 billion pores, regularly distributed over the wafer in a hexagonal array with a pitch of 3.5 μm, were obtained using an electrolytic back contact. The diameter of the pores was about 2 μm and depths up to 400 μm could be achieved. Kinetic experiments revealed that the etching process was diffusion controlled in a solution containing HF, H 2 O, and ethanol. Electrochemical experiments showed that H 2 evolution took place at the back side of the Si wafer and that H 2 and O 2 evolved at the Pt cathode and anode, respectively. |
| نوع الوثيقة: |
article in journal/newspaper |
| وصف الملف: |
application/pdf |
| اللغة: |
English |
| Relation: |
http://repository.tue.nl/901870 |
| الاتاحة: |
http://repository.tue.nl/901870 |
| Rights: |
Copyright (c) Meerakker, JEAM van de ; Copyright (c) Elfrink, RJG ; Copyright (c) Roozeboom, F Fred ; Copyright (c) Verhoeven, JFCM |
| رقم الانضمام: |
edsbas.B34DDD2E |
| قاعدة البيانات: |
BASE |