Academic Journal
InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study
| العنوان: | InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study |
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| المؤلفون: | Hospodková, A. (Alice), Nikl, M. (Martin), Pacherová, O. (Oliva), Oswald, J. (Jiří), Brůža, P., Pánek, D., Foltynski, B., Hulicius, E. (Eduard), Beitlerová, A. (Alena), Heuken, M. |
| سنة النشر: | 2014 |
| المجموعة: | The Czech Academy of Sciences: Publication Activity (ASEP) / Akademie věd ČR - Publikační činnost |
| مصطلحات موضوعية: | III-nitrides, scintilator, radioluminescence |
| الوصف: | InGaN/GaN multiple quantum well (MQW) structure was prepared MOVPE and characterized by fine XRD measurements. Suitability for scintillator application including a unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft x-ray source in extended dynamical and time scaleswas demonstrated. The photoluminescent and radioluminescent spectra were measured. the ratio of the intensity of quantum well (QW) exciton luminescence to the intensity of the yellow luminescence (YL) band IQW/IYL depends strongly on the type and intensity of excitation. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| تدمد: | 0957-4484 1361-6528 |
| Relation: | urn:pissn: 0957-4484; urn:eissn: 1361-6528; http://hdl.handle.net/11104/0237717 |
| DOI: | 10.1088/0957-4484/25/45/455501 |
| الاتاحة: | https://doi.org/10.1088/0957-4484/25/45/455501 http://hdl.handle.net/11104/0237717 |
| رقم الانضمام: | edsbas.AF42BD57 |
| قاعدة البيانات: | BASE |
| تدمد: | 09574484 13616528 |
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| DOI: | 10.1088/0957-4484/25/45/455501 |