التفاصيل البيبلوغرافية
| العنوان: |
Thermophotovoltaic energy conversion system having a heavily doped n-type region |
| المؤلفون: |
DePoy, David M, Charache, Greg W, Baldasaro, Paul F |
| سنة النشر: |
2023 |
| المجموعة: |
SciTec Connect (Office of Scientific and Technical Information - OSTI, U.S. Department of Energy) |
| الوصف: |
A thermophotovoltaic (TPV) energy conversion semiconductor device is provided which incorporates a heavily doped n-type region and which, as a consequence, has improved TPV conversion efficiency. The thermophotovoltaic energy conversion device includes an emitter layer having first and second opposed sides and a base layer in contact with the first side of the emitter layer. A highly doped n-type cap layer is formed on the second side of the emitter layer or, in another embodiment, a heavily doped n-type emitter layer takes the place of the cap layer. |
| نوع الوثيقة: |
other/unknown material |
| وصف الملف: |
application/pdf |
| اللغة: |
unknown |
| Relation: |
http://www.osti.gov/servlets/purl/872931; https://www.osti.gov/biblio/872931 |
| الاتاحة: |
http://www.osti.gov/servlets/purl/872931
https://www.osti.gov/biblio/872931 |
| رقم الانضمام: |
edsbas.AEC48B11 |
| قاعدة البيانات: |
BASE |