Effects of hydrogen implantation into GaN

التفاصيل البيبلوغرافية
العنوان:	Effects of hydrogen implantation into GaN
المؤلفون:	Department of Materials Science and Engineering, University of Florida, Rhines Hall, P.O. Box 116400, Gainesville, FL 32611, USA ( host institution ), Pearton, S.J. ( author ), Abernathy, C.R. ( author ), Wilson, R.G. ( author ), Zavada, J.M. ( author ), Song, C.Y. ( author ), Weinstein, M.G. ( author ), Stavola, M. ( author ), Han, J. ( author ), Shul, R.J. ( author )
بيانات النشر:	Elsevier B.V.
سنة النشر:	1999
المجموعة:	University of Florida: Digital Library Center
مصطلحات موضوعية:	68.55L, 72.80E, 71.55E, Hydrogen, GaN, Compensation, Device isolation, Defects
الوصف:	Nuclear Inst. and Methods in Physics Research, B 147 (1999) 171-174. doi:10.1016/S0168-583X(98)90561-4 ; 2016-03-04T18:46:49Z
نوع الوثيقة:	text
وصف الملف:	Pages 171-174
اللغة:	English
Relation:	Nuclear Inst. and Methods in Physics Research, B; S0168-583X(98)90561-4; NIMB; 6024; http://ufdc.ufl.edu/LS00514899/00001
DOI:	10.1016/S0168-583X(98)90561-4
الاتاحة:	https://doi.org/10.1016/S0168-583X(98)90561-4 http://ufdc.ufl.edu/LS00514899/00001
Rights:	This item is licensed with the Creative Commons Attribution No Derivatives License. This license allows for redistribution, commercial and non-commercial, as long as it is passed along unchanged and in whole, with credit to the author. © 1999
رقم الانضمام:	edsbas.AEB89214
قاعدة البيانات:	BASE

الوصف
DOI:	10.1016/S0168-583X(98)90561-4