Academic Journal
Transport mechanisms in hyperdoped silicon solar cells
| العنوان: | Transport mechanisms in hyperdoped silicon solar cells |
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| المؤلفون: | García Hernansanz, Rodrigo, Duarte Cano, Sebastián, Pérez Centeno, F, Caudevilla Gutiérrez, Daniel, Algaidy, S., Garcia Hemme, E., Olea Ariza, Javier, Pastor, D., Del Prado, A., San Andrés, E., Martil, Ignacio, Ros Costals, Eloi, Puigdollers i González, Joaquim, Ortega Villasclaras, Pablo Rafael, Voz Sánchez, Cristóbal |
| المساهمون: | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya. MNT-Solar - Grup de Micro i Nano Tecnologies per Energia Solar |
| سنة النشر: | 2022 |
| المجموعة: | Universitat Politècnica de Catalunya, BarcelonaTech: UPCommons - Global access to UPC knowledge |
| مصطلحات موضوعية: | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars, Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica, Solar cells, Photovoltaic power generation, Cèl·lules solars, Energia solar fotovoltaica |
| الوصف: | According to intermediate band (IB) theory, it is possible to increase the efficiency of a solar cell by boosting its ability to absorb low-energy photons. In this study, we used a hyperdoped semiconductor approach for this theory to create a proof of concept of different silicon-based IB solar cells. Preliminary results show an increase in the external quantum efficiency (EQE) in the silicon sub-bandgap region. This result points to sub-bandgap absorption in silicon having not only a direct application in solar cells but also in other areas such as infrared photodetectors. To establish the transport mechanisms in the hyperdoped semiconductors within a solar cell, we measured the J–V characteristic at different temperatures. We carried out the measurements in both dark and illuminated conditions. To explain the behavior of the measurements, we proposed a new model with three elements for the IB solar cell. This model is similar to the classic two-diodes solar cell model but it is necessary to include a new limiting current element in series with one of the diodes. The proposed model is also compatible with an impurity band formation within silicon bandgap. At high temperatures, the distance between the IB and the n-type amorphous silicon conduction band is close enough and both bands are contacted. As the temperature decreases, the distance between the bands increases and therefore this process becomes more limiting. ; The authors would like to thank the Physical Sciences Research Assistance Centre (CAI de Técnicas Físicas) of the Complutense University of Madrid. This study was partially funded by Project MADRID-PV2 (P2018/EMT-4308), with aid from the Regional Government of Madrid and the ERDF, by the Spanish Ministry of Science and Innovation/National Research Agency (MCIN/AEI) under grants TEC2017- 84378-R, PID2019-109215RB-C41, PID2020-116508RB-I00 and PID2020- 117498RB-I00. Daniel Caudevilla would like to express his thanks for grant PRE2018-083798, provided by the MICINN and the European Social Fund. ... |
| نوع الوثيقة: | article in journal/newspaper |
| وصف الملف: | application/pdf |
| اللغة: | English |
| تدمد: | 0268-1242 |
| Relation: | https://iopscience.iop.org/article/10.1088/1361-6641/ac9f63; info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2019-109215RB-C41/ES/CONTACTOS SELECTIVOS Y CAPAS ACTIVOS PARA DISPOSITIVOS DE ENERGIA/; García, R. [et al.]. Transport mechanisms in hyperdoped silicon solar cells. "Semiconductor science and technology", 16 Novembre 2022, vol. 38, núm. 12, article 124001.; http://hdl.handle.net/2117/377835 |
| DOI: | 10.1088/1361-6641/ac9f63 |
| الاتاحة: | http://hdl.handle.net/2117/377835 https://doi.org/10.1088/1361-6641/ac9f63 |
| Rights: | Attribution-NonCommercial-NoDerivs 4.0 International ; https://creativecommons.org/licenses/by-nc-nd/4.0/ ; Open Access |
| رقم الانضمام: | edsbas.AE75E313 |
| قاعدة البيانات: | BASE |
| تدمد: | 02681242 |
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| DOI: | 10.1088/1361-6641/ac9f63 |