Conference
Impact of Process Variations on Back-Bias Effect in 100V p-GaN Gate AlGaN/GaN HEMTs
| العنوان: | Impact of Process Variations on Back-Bias Effect in 100V p-GaN Gate AlGaN/GaN HEMTs |
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| المؤلفون: | Cioni M., Giorgino G., Chini A., Marletta G., Miccoli C., Castagna M. E., Luongo G., Moschetti M., Tringali C., Iucolano F. |
| المساهمون: | Cioni, M., Giorgino, G., Chini, A., Marletta, G., Miccoli, C., Castagna, M. E., Luongo, G., Moschetti, M., Tringali, C., Iucolano, F. |
| بيانات النشر: | Institute of Electrical and Electronics Engineers Inc. |
| سنة النشر: | 2023 |
| المجموعة: | Archivio della ricerca dell'Università di Modena e Reggio Emilia (Unimore: IRIS) |
| مصطلحات موضوعية: | 2-DEG density, Back-Effect, GaN HEMT, RON-degradation, Vertical Leakage, VTH drift |
| الوصف: | In this paper, we investigate the impact of Buffer resistivity and AlGaN barrier design on back-bias stress performed on 100 V p-GaN gate AlGaN/GaN HEMTs. To this end, we compare the results obtained in terms of (i) vertical leakage, (ii) back-bias stress on Transmission Line Measurements (TLM) structures and (iii) back-gating on real transistors. Concerning the latter, a novel test sequence is implemented to monitor the drain current evolution during the stress and evaluate the impact on V TH and R ON parameters after 1000 s stress with V SUB =-50 V. Results indicate that high resistive buffer can significantly reduce the back-bias effect, but also the AlGaN barrier design can affect the parameters drift due to a different two-dimensional electron gas (2DEG) density. |
| نوع الوثيقة: | conference object |
| اللغة: | English |
| Relation: | info:eu-repo/semantics/altIdentifier/isbn/979-8-3503-3713-6; ispartofbook:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023; 10th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023; https://hdl.handle.net/11380/1332187; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85183585579 |
| DOI: | 10.1109/WiPDA58524.2023.10382224 |
| الاتاحة: | https://hdl.handle.net/11380/1332187 https://doi.org/10.1109/WiPDA58524.2023.10382224 |
| رقم الانضمام: | edsbas.AD7D5671 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1109/WiPDA58524.2023.10382224 |
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