Report
High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions
| العنوان: | High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions |
|---|---|
| المؤلفون: | Zheng Liu, Zhang Feng, Liu Sheng-Bei, Dong Lin, Liu Xing-Fang, Fan Zhong-Chao, Liu Bin, Yan Guo-Guo, Wang Lei, Zhao Wan-Shun, Sun Guo-Sheng, He Zhi, Yang Fu-Hua |
| سنة النشر: | 2013 |
| المجموعة: | Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: | 半导体材料 |
| نوع الوثيقة: | report |
| اللغة: | English |
| Relation: | Chinese Physics B; Zheng Liu, Zhang Feng, Liu Sheng-Bei, Dong Lin, Liu Xing-Fang, Fan Zhong-Chao, Liu Bin, Yan Guo-Guo, Wang Lei, Zhao Wan-Shun, Sun Guo-Sheng, He Zhi, Yang Fu-Hua.High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions.Chinese Physics B,2013,22(9):7302; http://ir.semi.ac.cn/handle/172111/24568 |
| الاتاحة: | http://ir.semi.ac.cn/handle/172111/24568 |
| رقم الانضمام: | edsbas.AD682860 |
| قاعدة البيانات: | BASE |
| الوصف غير متاح. |