Academic Journal
Luminescence and scintillation properties of the Si doped InGaN/GaN multiple quantum wells
| العنوان: | Luminescence and scintillation properties of the Si doped InGaN/GaN multiple quantum wells |
|---|---|
| المؤلفون: | Buryi, M, Hubáček, T, Hájek, F, Jarý, V, Babin, V, Kuldová, K, Vaněk, T |
| المصدر: | Journal of Physics: Conference Series ; volume 2413, issue 1, page 012001 ; ISSN 1742-6588 1742-6596 |
| بيانات النشر: | IOP Publishing |
| سنة النشر: | 2022 |
| الوصف: | The InGaN multiple quantum wells (MQW) samples with the undoped and Si doped GaN barriers were grown by Metal Organic Vapour Phase Epitaxy (MOVPE). By comparing defects-related emission bands in the undoped GaN and InGaN layers, one may conclude that the band is complex in the InGaN layer, composed of at least two contributions peaking at 2.17 and 2.39 eV, respectively. In and Si affect the intensity of the defects-related band – the larger the In and/or Si concentration the stronger the band. The detailed investigation of the observed phenomena was conducted, and the observed peculiarities were explained. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| DOI: | 10.1088/1742-6596/2413/1/012001 |
| DOI: | 10.1088/1742-6596/2413/1/012001/pdf |
| الاتاحة: | http://dx.doi.org/10.1088/1742-6596/2413/1/012001 https://iopscience.iop.org/article/10.1088/1742-6596/2413/1/012001 https://iopscience.iop.org/article/10.1088/1742-6596/2413/1/012001/pdf |
| Rights: | http://creativecommons.org/licenses/by/3.0/ ; https://iopscience.iop.org/info/page/text-and-data-mining |
| رقم الانضمام: | edsbas.AC73ED97 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1088/1742-6596/2413/1/012001 |
|---|