Academic Journal
Saturation of Open‐Circuit Voltage at Higher Light Intensity Caused by Interfacial Defects and Nonradiative Recombination Losses in Perovskite Solar Cells
| العنوان: | Saturation of Open‐Circuit Voltage at Higher Light Intensity Caused by Interfacial Defects and Nonradiative Recombination Losses in Perovskite Solar Cells |
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| المؤلفون: | Ompong, David, Ram, Kiran Sreedhar, Setsoafia, Daniel Dodzi Yao, Mehdizadeh Rad, Hooman, Singh, Jai |
| المصدر: | Advanced Materials Interfaces ; volume 10, issue 1 ; ISSN 2196-7350 2196-7350 |
| بيانات النشر: | Wiley |
| سنة النشر: | 2022 |
| المجموعة: | Wiley Online Library (Open Access Articles via Crossref) |
| الوصف: | A new analytical expression that directly relates the open‐circuit voltage ( V oc ) in perovskite solar cells (PSCs) to the quasi‐Fermi level splitting (QFLS), interface energy offsets, and nonradiative recombination losses has been derived. It is found that the QFLS of the active layer plays a dominant role in enhancing V oc of PSCs. The newly derived V oc is applied to two PSCs with the hole transport layer (HTL) of poly[bis(4‐phenyl)(2,4,6‐trimethylphenyl)amine], and poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) and found that the first PSC has a higher V oc , which agrees well with the experimental results. It is found that both PSCs exhibit saturation of V oc at the higher charge carrier generation rates and hence at higher light intensities. The lower V oc in PSC with P3HT as HTL is attributed to the stronger band bending and higher interfacial defects. In accordance with the results, a large quasi‐Fermi level splitting and a minimal interfacial energy offsets may be considered when selecting material for high V oc PSCs. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1002/admi.202201578 |
| الاتاحة: | http://dx.doi.org/10.1002/admi.202201578 https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202201578 https://onlinelibrary.wiley.com/doi/full-xml/10.1002/admi.202201578 |
| Rights: | http://creativecommons.org/licenses/by/4.0/ |
| رقم الانضمام: | edsbas.A81F33CE |
| قاعدة البيانات: | BASE |
| DOI: | 10.1002/admi.202201578 |
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