Photonics Integration Devices and Technologies

التفاصيل البيبلوغرافية
العنوان: Photonics Integration Devices and Technologies
المؤلفون: VAWTER, GREGORY A., LIN, SHAWN-YU, SULLIVAN, CHARLES T., ZUBRZYCKI, WALTER J., CHOW, WENG W., ALLERMAN, ANDREW A., WENDT, JOEL R.
سنة النشر: 2021
المجموعة: SciTec Connect (Office of Scientific and Technical Information - OSTI, U.S. Department of Energy)
مصطلحات موضوعية: 42 ENGINEERING, ALUMINIUM ARSENIDES, GALLIUM ARSENIDES, ETCHING, OXIDATION, SEMICONDUCTOR LASERS, WAVEGUIDES, INTEGRATED CIRCUITS, PHOTOELECTRIC EFFECT, DOPED MATERIALS, MINIATURIZATION
الوصف: We have used selective AlGaAs oxidation, dry-etching, and high-gain semiconductor laser simulation to create new in-plane lasers with interconnecting passive waveguides for use in high-density photonic circuits and future integration of photonics with electronics. Selective oxidation and doping of semiconductor heterostructures have made vertical cavity surface emitting lasers (VCSELs) into the world's most efficient low-power lasers. We apply oxidation technology to improve edge-emitting lasers and photonic-crystal waveguides, making them suitable for monolithic integrated microsystems. Two types of lasers are investigated: (1) a ridge laser with resonant coupling to an output waveguide; (2) a selectively-oxidized laser with a low active volume and potentially sub-milliAmp threshold current. Emphasis is on development of high-performance lasers suited for monolithic integration with photonic circuit elements.
نوع الوثيقة: other/unknown material
وصف الملف: application/pdf
اللغة: unknown
Relation: http://www.osti.gov/servlets/purl/780313; https://www.osti.gov/biblio/780313; https://doi.org/10.2172/780313
DOI: 10.2172/780313
الاتاحة: http://www.osti.gov/servlets/purl/780313
https://www.osti.gov/biblio/780313
https://doi.org/10.2172/780313
رقم الانضمام: edsbas.A664E0E6
قاعدة البيانات: BASE