Academic Journal
Terahertz transient stimulated emission from doped silicon
العنوان: | Terahertz transient stimulated emission from doped silicon |
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المؤلفون: | Pavlov, S.G., Deßmann, N., Pohl, A., Zhukavin, R.K., Klaassen, T.O., Abrosimov, N.V., Riemann, H., Redlich, B., Van Der Meer, A.F.G., Ortega, J.-M., Prazeres, R., Orlova, E.E., Muraviev, A.V., Shastin, V.N., Hübers, H.-W. |
بيانات النشر: | AIP Publishing |
سنة النشر: | 2020 |
المجموعة: | LeibnizOpen (The Leibniz Association) |
مصطلحات موضوعية: | Crystal impurities, Electrons, Emission spectroscopy, Free electron lasers, Optical pumping, Silicon, Stimulated emission, Emission spectrums, Impurity transitions, Infrared free electron lasers, Lasing threshold, Optically pumped, Phosphorus-doped, Population inversions, Terahertz frequencies, Ultrafast lasers |
Time: | 530 |
الوصف: | Transient-type stimulated emission in the terahertz (THz) frequency range has been achieved from phosphorus doped silicon crystals under optical excitation by a few-picosecond-long pulses generated by the infrared free electron lasers FELIX and CLIO. The analysis of the lasing threshold and emission spectra indicates that the stimulated emission occurs due to combined population inversion based lasing and stimulated Raman scattering. Giant gain has been obtained in the optically pumped silicon due to large THz cross sections of intracenter impurity transitions and resonant intracenter electronic scattering. The transient-type emission is formed under conditions when the pump pulse intervals exceed significantly the photon lifetime in the laser resonator. © 2020 Author(s). ; publishedVersion |
نوع الوثيقة: | article in journal/newspaper |
وصف الملف: | application/pdf |
اللغة: | English |
DOI: | 10.34657/6110 |
الاتاحة: | https://oa.tib.eu/renate/handle/123456789/7063 https://doi.org/10.34657/6110 |
Rights: | CC BY 4.0 Unported ; https://creativecommons.org/licenses/by/4.0/ |
رقم الانضمام: | edsbas.A6349A06 |
قاعدة البيانات: | BASE |
DOI: | 10.34657/6110 |
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