Academic Journal

Terahertz transient stimulated emission from doped silicon

التفاصيل البيبلوغرافية
العنوان: Terahertz transient stimulated emission from doped silicon
المؤلفون: Pavlov, S.G., Deßmann, N., Pohl, A., Zhukavin, R.K., Klaassen, T.O., Abrosimov, N.V., Riemann, H., Redlich, B., Van Der Meer, A.F.G., Ortega, J.-M., Prazeres, R., Orlova, E.E., Muraviev, A.V., Shastin, V.N., Hübers, H.-W.
بيانات النشر: AIP Publishing
سنة النشر: 2020
المجموعة: LeibnizOpen (The Leibniz Association)
مصطلحات موضوعية: Crystal impurities, Electrons, Emission spectroscopy, Free electron lasers, Optical pumping, Silicon, Stimulated emission, Emission spectrums, Impurity transitions, Infrared free electron lasers, Lasing threshold, Optically pumped, Phosphorus-doped, Population inversions, Terahertz frequencies, Ultrafast lasers
Time: 530
الوصف: Transient-type stimulated emission in the terahertz (THz) frequency range has been achieved from phosphorus doped silicon crystals under optical excitation by a few-picosecond-long pulses generated by the infrared free electron lasers FELIX and CLIO. The analysis of the lasing threshold and emission spectra indicates that the stimulated emission occurs due to combined population inversion based lasing and stimulated Raman scattering. Giant gain has been obtained in the optically pumped silicon due to large THz cross sections of intracenter impurity transitions and resonant intracenter electronic scattering. The transient-type emission is formed under conditions when the pump pulse intervals exceed significantly the photon lifetime in the laser resonator. © 2020 Author(s). ; publishedVersion
نوع الوثيقة: article in journal/newspaper
وصف الملف: application/pdf
اللغة: English
DOI: 10.34657/6110
الاتاحة: https://oa.tib.eu/renate/handle/123456789/7063
https://doi.org/10.34657/6110
Rights: CC BY 4.0 Unported ; https://creativecommons.org/licenses/by/4.0/
رقم الانضمام: edsbas.A6349A06
قاعدة البيانات: BASE