Academic Journal
Analysis of the optical properties of Cu In1-x Gax 3 Se5 crystals
| العنوان: | Analysis of the optical properties of Cu In1-x Gax 3 Se5 crystals |
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| المؤلفون: | Leon, M., Serna, R., Levcenco, S.V., Levcenko, S.V., Gurieva, G.A., Merino, J., Friedrich Kernahan, E., Aruşanov, E.C., Arushanov, E. |
| المصدر: | Journal of Applied Physics 1-6 |
| سنة النشر: | 2008 |
| مصطلحات موضوعية: | Engineering controlled terms Annealing, copper, crystallography, Crystals, Equations of state, gallium, Optical materials, optical properties, Photons, powders, probability density function, Refractive index Engineering uncontrolled terms Ab sorption coefficients, Angle of incidences, complex dielectric functions, Complex refractive indices, critical points, Dielectric functions, Ellipsometer, Experimental datums, Ga contents, Interband transitions, Mixed Crystals, Model parameters, Photon energies, Photon energy ranges, Room temperatures, Simulated annealing algorithms, Spectral dependences Engineering main heading Simulated annealing |
| الوصف: | Analysis of the optical properties of bulk Cu In1-x Gax 3 Se5 mixed crystals synthesized from the elements as a function of the Ga content is presented. Measurements of the complex dielectric function epsilon; omega; = epsilon;1 omega; +i epsilon;2 omega; were performed at room temperature in the photon energy range of 0.8-4.7 eV using a variable angle of incidence ellipsometer. The spectral dependence of the complex refractive index, the absorption coefficient, and the normal-incidence reflectivity were also derived. The structure observed in the dielectric functions attributed to the interband transitions E0, E1A, and E1B has been modeled using a modification of the Adachi#39;s model. The results are in excellent agreement with the experimental data over the entire range of photon energies. The model parameters, including the energies corresponding to the lowest direct gap and higher critical points, have been determined using the simulated annealing algorithm. The values of E0 and E1A are found to increase linearly with the increasing Ga content. |
| نوع الوثيقة: | article in journal/newspaper |
| وصف الملف: | application/pdf |
| اللغة: | English |
| تدمد: | 00218979 |
| Relation: | info:eu-repo/grantAgreement/EC/FP7/2875/EU/Cresterea cristalelor de In2Se3 si CuIn5Se3 sj a solutiilor solide ce apartin sistemclor In2Se3 CuIn5Se8, studiul proprietatilor lor fizice si fizico-chimice/08.820.05.14BF; https://ibn.idsi.md/vizualizare_articol/189836; urn:issn:00218979 |
| DOI: | 10.1063/1.2986159 |
| الاتاحة: | https://ibn.idsi.md/vizualizare_articol/189836 https://doi.org/10.1063/1.2986159 |
| Rights: | info:eu-repo/semantics/openAccess |
| رقم الانضمام: | edsbas.A56473DF |
| قاعدة البيانات: | BASE |
| تدمد: | 00218979 |
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| DOI: | 10.1063/1.2986159 |