Dissertation/ Thesis
Quantum spin Hall effet in III-V materials ; Effet Hall Quantiques de spin dans les matériaux III-V
| العنوان: | Quantum spin Hall effet in III-V materials ; Effet Hall Quantiques de spin dans les matériaux III-V |
|---|---|
| المؤلفون: | Avogadri, Colin |
| المساهمون: | Laboratoire Charles Coulomb (L2C), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Université de Montpellier, Benoît Jouault, Frédéric Teppe, Sébastien Nanot |
| المصدر: | https://theses.hal.science/tel-04486230 ; Quantum Physics [quant-ph]. Université de Montpellier, 2023. English. ⟨NNT : 2023UMONS004⟩. |
| بيانات النشر: | CCSD |
| سنة النشر: | 2023 |
| المجموعة: | Université de Montpellier: HAL |
| مصطلحات موضوعية: | Magnetotransport, Quantum Spin Hall effect, Quantum wells, Topological Insulators, THz spectroscopy, III-V materials, Magneto-Transport, Effet Hall quantique de spin, Puits quantiques, Isolants topologiques, Spectrocopie THZ, Matériaux III-V, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph] |
| الوصف: | The spin-orbit interaction is a relativistic effect that couples the electron's displacement to its spin. This coupling is of great interest in solid state physics. Indeed, this coupling allows the propagation of information via the electron spin and not only via its charge, as it is the case in traditional microelectronics. This new approach, more than a simple improvement of the performances, is thus a change of the basic support of the information. Many practical applications have been envisaged. The mastery of spin-orbit coupling would allow the development of new spin-electronic systems (hence the word 'spintronics'), responding to the challenges of reducing energy consumption, for example. In the longer term, the control of the electronic spin would also allow the coding of information via a superposition of states, which would open the way to the realization of quantum bits (by analogy to the binary bit of a "classical" computer) realized in condensed matter.From this interest in spin-orbit coupling has emerged in recent years the subject of two-dimensional topological insulators, or spin quantum Hall effect insulators. These remarkable insulators are realized from materials with strong spin-orbit coupling.The first realizations of such insulators were obtained with semiconductors of the II-VI family. These insulators only survive at very low temperatures, of the order of Kelvin, because of particularities of the II-VI band structure. This motivated our search for new candidate materials for the observation of the spin quantum Hall effect at higher temperatures. During my thesis, I was interested in InAs/GaSb based structures, because in addition to the theoretical predictions and first demonstrations of the validity of these structures for the observation of the spin quantum Hall effect, the growth and fabrication of devices based on these III-V semiconductors is more widespread than for II-VI.In the first chapter, we present a review of recent work around topological insulators, from the emergence of ... |
| نوع الوثيقة: | doctoral or postdoctoral thesis |
| اللغة: | English |
| Relation: | NNT: 2023UMONS004 |
| الاتاحة: | https://theses.hal.science/tel-04486230 https://theses.hal.science/tel-04486230v2/document https://theses.hal.science/tel-04486230v2/file/AVOGADRI_2023_archivage.pdf |
| Rights: | info:eu-repo/semantics/OpenAccess |
| رقم الانضمام: | edsbas.A4B8C4D8 |
| قاعدة البيانات: | BASE |
| الوصف غير متاح. |