التفاصيل البيبلوغرافية
| العنوان: |
Control by an electric field of electron-hole separation in type-II heterostructures |
| المؤلفون: |
Vasilyev, Yu.B., Solov'ev, V.A., Mel'tser, B.Ya., Semenov, A.N., Baidakova, M.V., Ivanov, S.V., Kop'ev, P.S., Mendez, E.E., Lin, Y. |
| المساهمون: |
林怡萍 |
| بيانات النشر: |
Elsevier |
| سنة النشر: |
2002 |
| المجموعة: |
National Tsing Hua University Institutional Repository (NTHUR) |
| مصطلحات موضوعية: |
A. Nanostructures, B. Epitaxy, D. Electronic transport |
| Time: |
33 |
| الوصف: |
2010116010001 ; 物理系 ; We report the realization of multi-period devices in which each period consists of two-dimensional electron and hole layers whose effective distance is controlled by an external bias. The current–voltage characteristics of devices based on InAs/AlxGa1−xAsSb/Al0.1Ga0.9AsSb type-II quantum well structures show a behavior that is consistent with a predicted enhancement of the radiative recombination in this type of devices at T=77 K. We have found that increasing the number of periods and decreasing the operating temperature considerably improves the electrical performance of the devices. |
| نوع الوثيقة: |
journal/newspaper |
| اللغة: |
English |
| تدمد: |
0038-1098 |
| Relation: |
Solid State Communications, Elsevier, Volume 124, Issue 9, November 2002, Pages 323-326; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/54851 |
| الاتاحة: |
http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/54851 |
| رقم الانضمام: |
edsbas.A0310848 |
| قاعدة البيانات: |
BASE |