A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory

التفاصيل البيبلوغرافية
العنوان: A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory
المؤلفون: Seo, Min-Woong, Chu, Myunglae, Jung, Hyun-Yong, Kim, Suksan, Song, Jiyoun, Lee, Junan, Kim, Sung-Yong, Lee, Jongyeon, Byun, Sung-Jae, Bae, Daehee, Kim, Minkyung, Lee, Gwi-Deok, Shim, Heesung, Um, Changyong, Kim, Changhwa, Baek, In-Gyu, Kwon, Doowon, Kim, Hongki, Choi, Hyuksoon, Go, Jonghyun, Ahn, JungChak, Lee, Jaekyu, Moon, Changrok, Lee, Kyupil, Kim, Hyoung-Sub
المصدر: 2021 Symposium on VLSI Circuits
بيانات النشر: IEEE
سنة النشر: 2021
نوع الوثيقة: conference object
اللغة: unknown
DOI: 10.23919/vlsicircuits52068.2021.9492357
الاتاحة: http://dx.doi.org/10.23919/vlsicircuits52068.2021.9492357
http://xplorestaging.ieee.org/ielx7/9492225/9492226/09492357.pdf?arnumber=9492357
رقم الانضمام: edsbas.9E94911
قاعدة البيانات: BASE
الوصف
DOI:10.23919/vlsicircuits52068.2021.9492357