Conference
A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory
العنوان: | A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory |
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المؤلفون: | Seo, Min-Woong, Chu, Myunglae, Jung, Hyun-Yong, Kim, Suksan, Song, Jiyoun, Lee, Junan, Kim, Sung-Yong, Lee, Jongyeon, Byun, Sung-Jae, Bae, Daehee, Kim, Minkyung, Lee, Gwi-Deok, Shim, Heesung, Um, Changyong, Kim, Changhwa, Baek, In-Gyu, Kwon, Doowon, Kim, Hongki, Choi, Hyuksoon, Go, Jonghyun, Ahn, JungChak, Lee, Jaekyu, Moon, Changrok, Lee, Kyupil, Kim, Hyoung-Sub |
المصدر: | 2021 Symposium on VLSI Circuits |
بيانات النشر: | IEEE |
سنة النشر: | 2021 |
نوع الوثيقة: | conference object |
اللغة: | unknown |
DOI: | 10.23919/vlsicircuits52068.2021.9492357 |
الاتاحة: | http://dx.doi.org/10.23919/vlsicircuits52068.2021.9492357 http://xplorestaging.ieee.org/ielx7/9492225/9492226/09492357.pdf?arnumber=9492357 |
رقم الانضمام: | edsbas.9E94911 |
قاعدة البيانات: | BASE |
DOI: | 10.23919/vlsicircuits52068.2021.9492357 |
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