التفاصيل البيبلوغرافية
| العنوان: |
VO 2 Films Decorated with an MXene Interface for Decreased-Power-Triggered Terahertz Modulation |
| المؤلفون: |
Daoyuan Wang, Chengzhe Gao, Yunfeng Wang, Xue Chang, Yiwen Hu, Jiang Li, Tangdong Feng, Jayjit Kumar Dey, Basanta Roul, Xueguang Lu, Lianghui Du, Zhaohui Zhai, Hongfu Zhu, Wanxia Huang, Sujit Das, Fuhai Su, Li-Guo Zhu, Qiwu Shi |
| سنة النشر: |
1753 |
| المجموعة: |
Smithsonian Institution: Figshare |
| مصطلحات موضوعية: |
Plasma Physics, Infectious Diseases, Biological Sciences not elsewhere classified, Physical Sciences not elsewhere classified, slower transition speed, phase transition would, phase transition speed, phase transition phenomena, phase transition amplitude, induced phase transition, holds great promise, electrical devices including, approach often leads, 9 ° c, terahertz modulators based, phase transition threshold, holds significant potential, phase transition temperature, inhibit temperature rise, ultrafast terahertz modulation, picosecond time scale, 2 , picosecond scale, pump terahertz, ultrafast device, excitation threshold, significant reduction, highly significant, temperature effect, varying thicknesses |
| الوصف: |
VO 2 , which exhibits semiconductor–metal phase transition characteristics occurring on a picosecond time scale, holds great promise for ultrafast terahertz modulation in next-generation communication. However, as of now, there is no reported prototype for an ultrafast device. The temperature effect has been proposed as one of the major obstacles. Consequently, reducing the excitation threshold for the phase transition would be highly significant. The traditional strategy typically involves chemical doping, but this approach often leads to a decrease in phase transition amplitude and a slower transition speed. In this work, we proposed a design featuring a highly conductive MXene interfacial layer between the VO 2 film and the substrate. We demonstrate a significant reduction in the phase transition threshold for both temperature and laser-induced phase transition by adjusting the conductivity of the MXene layers with varying thicknesses. Our observations show that the phase transition temperature can be decreased by 9 °C, while the pump fluence for laser excitation can be reduced by as high as 36%. The ultrafast phase transition process on a picosecond scale, as revealed by the optical-pump terahertz-probe method, suggests that the MXene layers have minimal impact on the phase transition speed. Moreover, the reduced phase transition threshold can remarkably alleviate the photothermal effect and inhibit temperature rise and diffusion in VO 2 triggered by laser. This study offers a blueprint for designing VO 2 /MXene hybrid films with reduced phase transition thresholds. It holds significant potential for the development of low-power, intelligent optical and electrical devices including, but not limited to, terahertz modulators based on phase transition phenomena. |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
unknown |
| Relation: |
https://figshare.com/articles/journal_contribution/VO_sub_2_sub_Films_Decorated_with_an_MXene_Interface_for_Decreased-Power-Triggered_Terahertz_Modulation/25254263 |
| DOI: |
10.1021/acsami.3c16252.s001 |
| الاتاحة: |
https://doi.org/10.1021/acsami.3c16252.s001 |
| Rights: |
CC BY-NC 4.0 |
| رقم الانضمام: |
edsbas.9CD02501 |
| قاعدة البيانات: |
BASE |