Academic Journal

Graphene CVD: Interplay Between Growth and Etching on Morphology and Stacking by Hydrogen and Oxidizing Impurities

التفاصيل البيبلوغرافية
العنوان: Graphene CVD: Interplay Between Growth and Etching on Morphology and Stacking by Hydrogen and Oxidizing Impurities
المؤلفون: Choubak, Saman, Levesque, Pierre L., Gaufres, Etienne, Biron, Maxime, Desjardins, Patrick, Martel, Richard
المساهمون: Natural Sciences and Engineering Research Council of Canada, Canada Research Chairs, Selenium Tellurium Development Association
المصدر: The Journal of Physical Chemistry C ; volume 118, issue 37, page 21532-21540 ; ISSN 1932-7447 1932-7455
بيانات النشر: American Chemical Society (ACS)
سنة النشر: 2014
نوع الوثيقة: article in journal/newspaper
اللغة: English
DOI: 10.1021/jp5070215
الاتاحة: http://dx.doi.org/10.1021/jp5070215
https://pubs.acs.org/doi/pdf/10.1021/jp5070215
رقم الانضمام: edsbas.9C912A85
قاعدة البيانات: BASE