Academic Journal
Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors
| العنوان: | Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors |
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| المؤلفون: | Medina-Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V., Selberherr, S., Asenov, A. |
| المساهمون: | University of Glasgow, Department of Neuroscience and Biomedical Engineering, Vienna University of Technology, Aalto-yliopisto, Aalto University |
| سنة النشر: | 2018 |
| المجموعة: | Aalto University Publication Archive (Aaltodoc) / Aalto-yliopiston julkaisuarkistoa |
| مصطلحات موضوعية: | Impurity Scattering, Kubo-Greenwood Formalism, Matthiessen rule, Nanowire FETs, Phonon Scattering |
| الوصف: | The extensive research of aggressively scaled nano-electronic devices necessitates the inclusion of quantum confinement effects and their impact on performance. This work implements a set of multisubband phonon and impurity scattering mechanisms within the Kubo-Greenwood formalism in order to study their impact on the mobility in Si nanowire transistors (NWTs). This 1D treatment has been coupled with a 3D Poisson-2D Schrödinger solver, which accurately captures the effects of quantum confinement on charge dynamics. We also emphasize the importance of using the 1D models to evaluate the geometrical properties on mobility at the scaling limit. ; Peer reviewed |
| نوع الوثيقة: | text |
| وصف الملف: | 1-4; application/pdf |
| اللغة: | English |
| ردمك: | 978-1-5386-4811-7 1-5386-4811-3 |
| Relation: | Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon; 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018; Volume 2018-January; Medina-Bailon , C , Sadi , T , Nedjalkov , M , Lee , J , Berrada , S , Carrillo-Nunez , H , Georgiev , V , Selberherr , S & Asenov , A 2018 , Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors . in 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018 . vol. 2018-January , IEEE , pp. 1-4 , Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon , Granada , Spain , 19/03/2018 . https://doi.org/10.1109/ULIS.2018.8354723; PURE UUID: 8c55301c-376d-4f57-8895-8615389fb27c; PURE ITEMURL: https://research.aalto.fi/en/publications/8c55301c-376d-4f57-8895-8615389fb27c; PURE LINK: http://www.scopus.com/inward/record.url?scp=85050942677&partnerID=8YFLogxK; PURE FILEURL: https://research.aalto.fi/files/27537408/SCI_Medina_Bailon_Study_EUROSOI_ULIS_2018_CMedinaBailon.pdf; https://aaltodoc.aalto.fi/handle/123456789/35149; URN:NBN:fi:aalto-201812106164 |
| DOI: | 10.1109/ULIS.2018.8354723 |
| الاتاحة: | https://aaltodoc.aalto.fi/handle/123456789/35149 https://doi.org/10.1109/ULIS.2018.8354723 |
| Rights: | openAccess |
| رقم الانضمام: | edsbas.9B0CE258 |
| قاعدة البيانات: | BASE |
| ردمك: | 9781538648117 1538648113 |
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| DOI: | 10.1109/ULIS.2018.8354723 |