Academic Journal
RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band
| العنوان: | RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band |
|---|---|
| المؤلفون: | Green, Andrew J., Moser, Neil, Miller, Nicholas C., Liddy, Kyle J., Lindquist, Miles, Elliot, Michael, Gillespie, James K., Fitch, Robert C., Gilbert, Ryan, Walker, Dennis E., Werner, Elizabeth, Crespo, Antonio, Beam, Edward, Xie, Andy, Lee, Cathy, Cao, Yu, Chabak, Kelson D. |
| المساهمون: | Air Force Research Laboratory |
| المصدر: | IEEE Electron Device Letters ; volume 41, issue 8, page 1181-1184 ; ISSN 0741-3106 1558-0563 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE) |
| سنة النشر: | 2020 |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| DOI: | 10.1109/led.2020.3006035 |
| الاتاحة: | http://dx.doi.org/10.1109/led.2020.3006035 http://xplorestaging.ieee.org/ielx7/55/9147077/09129769.pdf?arnumber=9129769 |
| Rights: | https://creativecommons.org/licenses/by/4.0/legalcode |
| رقم الانضمام: | edsbas.9A931D1C |
| قاعدة البيانات: | BASE |
| DOI: | 10.1109/led.2020.3006035 |
|---|