التفاصيل البيبلوغرافية
| العنوان: |
Optical spectroscopy studies of III-nitrides heterostructures modified using ion beams for green and red solid-state emitters ; Estudos por espetroscopia ótica em heteroestruturas de III nitretos modificadas por feixe de iões para emissão no verde e vermelho |
| المؤلفون: |
Cardoso, José Pedro de Sousa |
| المساهمون: |
Correia, Maria do Rosário Pimenta, Sedrine, Nabiha Ben |
| سنة النشر: |
2024 |
| المجموعة: |
Repositório Institucional da Universidade de Aveiro (RIA) |
| مصطلحات موضوعية: |
Group III-Nitrides, Light-emitting devices, AlGaN, Nanowires, Europium, Ion implantation, InGaN, Quantum Wells, Swift-heavy ions, Ion irradiation, Photoluminescence, Raman spectroscopy |
| الوصف: |
Group III-nitrides (III-N) are among the most technologically valuable semiconductors in optoelectronics and electronics, with blue light-emitting diodes (LEDs) being their most outstanding application. Indeed, by controlling the composition of ternary AlGaN and InGaN alloys in the active region of the LEDs, it is possible to tune their emission color from ultraviolet to near-infrared. The realization of efficient III-N-based LEDs operating in the red, green, and blue (RGB) is essential for the monolithic (or quasi-monolithic) integration of RGB emitters, which is expected to enable the development of more efficient white LEDs and full-color displays at micro- and nano-scale. However, in contrast to the highly efficient blue LEDs based on InGaN/GaN multi-quantum well (MQW) with external quantum efficiency (EQE) of ~80–90 %, the need for high InN molar fractions causes the green and red LEDs to have much lower EQE (~60 % and ~10 %, respectively). In this thesis, two approaches involving the modification of the optical properties of III-N by ion irradiation techniques were investigated using optical spectroscopy techniques. The goal was to evaluate their viability for potential application as red and green LEDs. The first approach involved the implantation of AlGaN nanowires (NWs) with Eu3+, aiming to take advantage of their intense and atomic-like emission (intra-4f 6 transitions) to obtain red LEDs with improved efficiency and good color purity. The presented study evaluated which AlN molar fraction in AlGaN NWs’ host leads to a more intense and efficient Eu3+-related luminescence. From optical spectroscopy studies, it was identified that AlN NWs result in the strongest and most efficient red luminescence after post-implantation rapid thermal annealing (RTA) treatments. Compared to RTA at 1000 ºC, RTA at 1200 ºC improves the luminescence performance of these NW systems. Considering these results, AlN p-n junction NWs were implanted with Eu3+, with proof-ofconcept red LEDs being demonstrated. Although far from ... |
| نوع الوثيقة: |
doctoral or postdoctoral thesis |
| اللغة: |
English |
| Relation: |
info:eu-repo/grantAgreement/FCT//PD%2FBD%2F142780%2F2018/PT; info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDP%2F50025%2F2020/PT; info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDB%2F50025%2F2020/PT; info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/LA%2FP%2F0037%2F2020/PT; info:eu-repo/grantAgreement/FCT/3599-PPCDT/PTDC%2FCTM-CTM%2F3553%2F2020/PT; EdtlB.18-DFis/2022_8242; EdtlB.38-DFis/2022_30302; http://hdl.handle.net/10773/41507 |
| الاتاحة: |
http://hdl.handle.net/10773/41507 |
| Rights: |
openAccess ; https://creativecommons.org/licenses/by/4.0/ |
| رقم الانضمام: |
edsbas.9A627A3E |
| قاعدة البيانات: |
BASE |