التفاصيل البيبلوغرافية
| العنوان: |
In situ X ray microscopy of crack propagation to study fracture mechanics of on chip interconnect structures |
| المؤلفون: |
Kutukova, K., Liao, Z., Werner, S., Guttmann, P., Standke, Y., Gluch, J., Schneider, G., Zschech, E. |
| سنة النشر: |
2018 |
| المجموعة: |
Helmholtz Zentrum Berlin (HZB): Publications |
| مصطلحات موضوعية: |
Large scale facilities for research with photons neutrons and ions |
| الوصف: |
Chip package interaction CPI and the related thermomechanical stress in microchips increase the risk of failure in on chip interconnect stacks, caused by delamination along Cu dielectrics interfaces adhesive failure and fracture in dielectrics cohesive failure . High resolution transmission X ray microscopy TXM is a unique technique to image crack propagation in on chip interconnect stacks. The visualization of crack evolution in Cu low k Backend of Line BEoL structures is demonstrated using an experimental setup which combines high resolution X ray imaging with mechanical loading. The application of an indenter manipulator at the TXM beamline of the synchrotron radiation source BESSY II provides an unprecedented level of details on the fracture behavior of microchips. This in situ experiment allows to identify the weakest layers and interfaces and to evaluate the robustness of the BEoL stack against CPI |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
unknown |
| Relation: |
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=97156 |
| الاتاحة: |
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=97156 |
| Rights: |
info:eu-repo/semantics/closedAccess |
| رقم الانضمام: |
edsbas.98634403 |
| قاعدة البيانات: |
BASE |