Conference
The size and temperature effect of ideality factor in GaN/InGaN multiple quantum wells micro light emitting diodes (micro-LEDs)
| العنوان: | The size and temperature effect of ideality factor in GaN/InGaN multiple quantum wells micro light emitting diodes (micro-LEDs) |
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| المؤلفون: | Liu, Yibo, Zhang, Ke, Chan, Joe, Yeung, Sze Yan Fion, Liu, Zhaojun, Kwok, Hoi Sing |
| سنة النشر: | 2020 |
| المجموعة: | The Hong Kong University of Science and Technology: HKUST Institutional Repository |
| مصطلحات موضوعية: | Diode ideality factor, Gan/ingan multiple quantum wells, Micro light emitting diodes |
| الوصف: | In this paper, we reported a GaN/InGaN multiple quantum wells (MQWs) micro light emitting diode (Micro-LED) device with green light emission. For electronic performance, the Micro-LED device exhibited a forward voltage of only 2.61 V at the current density of 10 A/cm2. For illumination performance, the emission light had 519 nm peak wavelength with a full width at half maximum (FWHM) of 22 nm. Furthermore, the diode ideality factor (n) was calculated and analyzed with different temperature categories (303 K to 573 K) and pixel sizes (30 fim to 200 µm), revealing a lower value of n with temperature growing and device scaling down. © 2020 SID. |
| نوع الوثيقة: | conference object |
| اللغة: | English |
| تدمد: | 0097-966X |
| Relation: | http://repository.ust.hk/ir/Record/1783.1-106444; Digest of Technical Papers - SID International Symposium, v. 51, (1), 2020, article number P-99, p. 1735-1738, Book 3: Emissive, Micro‐LED and Quantum Dot Display; https://doi.org/10.1002/sdtp.14235; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0097-966X&rft.volume=v. 51&rft.issue=(1)&rft.date=2020&rft.spage=1735&rft.aulast=Liu&rft.aufirst=Y.&rft.atitle=The+size+and+temperature+effect+of+ideality+factor+in+GaN%2FInGaN+multiple+quantum+wells+micro+light+emitting+diodes+%28micro-LEDs%29&rft.title=Digest+of+Technical+Papers+-+SID+International+Symposium; http://www.scopus.com/record/display.url?eid=2-s2.0-85094182589&origin=inward |
| DOI: | 10.1002/sdtp.14235 |
| الاتاحة: | http://repository.ust.hk/ir/Record/1783.1-106444 https://doi.org/10.1002/sdtp.14235 http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0097-966X&rft.volume=v. 51&rft.issue=(1)&rft.date=2020&rft.spage=1735&rft.aulast=Liu&rft.aufirst=Y.&rft.atitle=The+size+and+temperature+effect+of+ideality+factor+in+GaN%2FInGaN+multiple+quantum+wells+micro+light+emitting+diodes+%28micro-LEDs%29&rft.title=Digest+of+Technical+Papers+-+SID+International+Symposium http://www.scopus.com/record/display.url?eid=2-s2.0-85094182589&origin=inward |
| رقم الانضمام: | edsbas.981F2091 |
| قاعدة البيانات: | BASE |
| تدمد: | 0097966X |
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| DOI: | 10.1002/sdtp.14235 |