Academic Journal
Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation
| العنوان: | Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation |
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| المؤلفون: | Li, Tong, Sakane, Hitoshi, HARADA, Shunta, Kato, Masashi |
| المساهمون: | New Energy and Industrial Technology Development Organization |
| المصدر: | Applied Physics Express ; ISSN 1882-0778 1882-0786 |
| بيانات النشر: | IOP Publishing |
| سنة النشر: | 2024 |
| الوصف: | Bipolar degradation is a critical problem in SiC devices, caused by the expansion of single Shockley stacking faults (1SSFs) from basal plane dislocations. This paper presents the effects of helium implantation on the suppression of 1SSFs expansion. The fabricated PiN diodes were analyzed using current-voltage characteristics and electroluminescence imaging. The results show that helium implantation can effectively suppress 1SSFs expansion without significantly degrading diode performance. We consider that this suppression is due to the pinning of dislocations by point defects introduced during helium implantation, and the reduction of carrier lifetime may also play a role in suppressing 1SSFs expansion. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| DOI: | 10.35848/1882-0786/ad6be5 |
| DOI: | 10.35848/1882-0786/ad6be5/pdf |
| الاتاحة: | http://dx.doi.org/10.35848/1882-0786/ad6be5 https://iopscience.iop.org/article/10.35848/1882-0786/ad6be5 https://iopscience.iop.org/article/10.35848/1882-0786/ad6be5/pdf |
| Rights: | https://creativecommons.org/licenses/by/4.0/ ; https://iopscience.iop.org/info/page/text-and-data-mining |
| رقم الانضمام: | edsbas.8FD1CC9 |
| قاعدة البيانات: | BASE |
| DOI: | 10.35848/1882-0786/ad6be5 |
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