Academic Journal
Investigating improvement in the performance of WS 2 absorber layer based thin film solar cell with a hole transport layer of Indium Telluride
| العنوان: | Investigating improvement in the performance of WS 2 absorber layer based thin film solar cell with a hole transport layer of Indium Telluride |
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| المؤلفون: | Pandey, Bhasker, Mishra, Rajan, Chauhan, R K, Patel, Alok Kumar |
| المصدر: | Physica Scripta ; volume 99, issue 8, page 085539 ; ISSN 0031-8949 1402-4896 |
| بيانات النشر: | IOP Publishing |
| سنة النشر: | 2024 |
| الوصف: | In this work, Tungsten Disulfide (WS 2 ) is used as absorber layer with Indium Telluride (In 2 Te 3 ) as hole transport layer and a comparison is made between the devices without and with hole transport layer. Analysis is carried out by varying thickness of WS 2 , Acceptor concentration of WS 2 , Interface defects, Temperature, Surface recombination velocities, Series and Shunt Resistances. It is observed that by introducing hole transport layer of Indium Telluride, carrier recombination losses can be restricted and the power conversion efficiency of proposed solar cell can be raised significantly. The efficiency of Tungsten Disulfide absorber layer based solar cell is 23.13% when hole transport layer is not inserted, whereas by incorporating a hole transport layer of Indium Telluride, it is increased to 25.37%. SCAPS-1D is used for simulation of the model. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| DOI: | 10.1088/1402-4896/ad624c |
| DOI: | 10.1088/1402-4896/ad624c/pdf |
| الاتاحة: | http://dx.doi.org/10.1088/1402-4896/ad624c https://iopscience.iop.org/article/10.1088/1402-4896/ad624c https://iopscience.iop.org/article/10.1088/1402-4896/ad624c/pdf |
| Rights: | https://iopscience.iop.org/page/copyright ; https://iopscience.iop.org/info/page/text-and-data-mining |
| رقم الانضمام: | edsbas.8EC8DB5A |
| قاعدة البيانات: | BASE |
| DOI: | 10.1088/1402-4896/ad624c |
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