Academic Journal
Nanosheet oxide semiconductor FETs with ALD InZnO x compared to InGaO x
| العنوان: | Nanosheet oxide semiconductor FETs with ALD InZnO x compared to InGaO x |
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| المؤلفون: | Kim, Sung-Hun, Hikake, Kaito, Li, Zhuo, Itoya, Yuki, Sakai, Kota, Saraya, Takuya, HIRAMOTO, Toshiro, Kobayashi, Masaharu |
| المساهمون: | Taiwan Semiconductor Manufacturing Company, Core Research for Evolutional Science and Technology, Japan Society for the Promotion of Science, Japan Science and Technology Agency |
| المصدر: | Japanese Journal of Applied Physics ; ISSN 0021-4922 1347-4065 |
| بيانات النشر: | IOP Publishing |
| سنة النشر: | 2025 |
| الوصف: | We established atomic layer deposition (ALD) process of InZnO x (IZO) and fabricate the ALD IZO FETs for comprehensive characterization, aimed at advancing nanosheet structure and monolithic 3D (M3D) integration technologies. Thermal stability and composition/thickness dependence on device characteristics are systematically explored. Our findings reveal that ALD IZO FETs maintain high thermal stability at temperatures up to 400 °C, and we identify critical trade-offs among key parameters such as mobility, threshold voltage (V th ), and initial V th shift (ΔV th ) under positive bias stress conditions. ALD IZO FETs show higher mobility, lower V th , and especially smaller initial ΔV th than previously reported our ALD InGaO x (IGO) FETs. These improvements are linked to the intrinsic differences in oxygen dissociation energy between the Zn and Ga in the compound of InO x . The material properties and device behavior of IZO FETs obtained in this work will provide insights for their application in M3D integration. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| DOI: | 10.35848/1347-4065/adac1f |
| DOI: | 10.35848/1347-4065/adac1f/pdf |
| الاتاحة: | https://doi.org/10.35848/1347-4065/adac1f https://iopscience.iop.org/article/10.35848/1347-4065/adac1f https://iopscience.iop.org/article/10.35848/1347-4065/adac1f/pdf |
| Rights: | https://iopscience.iop.org/page/copyright ; https://iopscience.iop.org/info/page/text-and-data-mining |
| رقم الانضمام: | edsbas.8E36E9B1 |
| قاعدة البيانات: | BASE |
| DOI: | 10.35848/1347-4065/adac1f |
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