Academic Journal
Achieving Adsorbate-Free Monolayered MoS 2 Field Effect Transistors by Controlled Surface Gas Treatment
| العنوان: | Achieving Adsorbate-Free Monolayered MoS 2 Field Effect Transistors by Controlled Surface Gas Treatment |
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| المؤلفون: | Junsung Byeon, Jaesik Eom, Taehun Kim, Jungmoon Lim, Min Jung, Younghoon Lim, Hongju Park, John Hong, Sangyeon Pak, SeungNam Cha |
| سنة النشر: | 2024 |
| مصطلحات موضوعية: | Biophysics, Physiology, Biotechnology, Environmental Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, using various spectroscopy, originally intended functions, highly sensitive nature, field effect transistors, atomically thin structure, highly conductive mos, 2 , particularly adsorbed molecules, free monolayered mos, monolayered mos, free mos, adsorbed molecules, treated mos, pristine mos, simple process, room temperature, reliable fabrication, external elements, electrical performance, electrical measurements, effectively eliminate, dry passivation, current level |
| الوصف: | Monolayered transition metal dichalcogenides (TMDCs) possess a highly sensitive nature to external elements, particularly adsorbed molecules on the surface such as H 2 O or O 2 molecules, due to their atomically thin structure. In this sense, it is important to develop a strategy to obtain a pristine surface of 2D TMDCs for the successful and reliable fabrication of a device with their originally intended functions. Here, we suggest a facile strategy of surface treatment to effectively eliminate the influence of adsorbed molecules in the electrical performance of the monolayered MoS 2 FETs via surface treatment using highly reactive H 2 S gas at room temperature. We demonstrated increased carrier concentration of absorbate-free MoS 2 using various spectroscopy and electrical measurements. The H 2 S-treated MoS 2 FETs showed a 171% increase in on-current level and reduced hysteresis window compared to pristine MoS 2 FETs. Moreover, the H 2 S-treated MoS 2 FETs exhibit increased field effect mobility. Additionally, we verified that the clean interface of MoS 2 is preserved through dry passivation of MoS 2 FETs. This unique room temperature surface treatment strategy allows the development of highly conductive MoS 2 FETs with a clean surface by a very simple process. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| Relation: | https://figshare.com/articles/journal_contribution/Achieving_Adsorbate-Free_Monolayered_MoS_sub_2_sub_Field_Effect_Transistors_by_Controlled_Surface_Gas_Treatment/25287589 |
| DOI: | 10.1021/acsaelm.3c01665.s001 |
| الاتاحة: | https://doi.org/10.1021/acsaelm.3c01665.s001 https://figshare.com/articles/journal_contribution/Achieving_Adsorbate-Free_Monolayered_MoS_sub_2_sub_Field_Effect_Transistors_by_Controlled_Surface_Gas_Treatment/25287589 |
| Rights: | CC BY-NC 4.0 |
| رقم الانضمام: | edsbas.8D5CAC74 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1021/acsaelm.3c01665.s001 |
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