Academic Journal
Effects of H 2 and N 2 treatment for B 2 H 6 dosing process on TiN surfaces during atomic layer deposition: an ab initio study
| العنوان: | Effects of H 2 and N 2 treatment for B 2 H 6 dosing process on TiN surfaces during atomic layer deposition: an ab initio study |
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| المؤلفون: | Park, Hwanyeol, Lee, Sungwoo, Kim, Ho Jun, Woo, Daekwang, Park, Se Jun, Kim, Kangsoo, Yoon, Euijoon, Lee, Gun-Do |
| المساهمون: | Korea Institute of Science and Technology Information |
| المصدر: | RSC Advances ; volume 8, issue 38, page 21164-21173 ; ISSN 2046-2069 |
| بيانات النشر: | Royal Society of Chemistry (RSC) |
| سنة النشر: | 2018 |
| الوصف: | Our results showed the effects of H 2 and N 2 treatment on TiN surfaces, using density functional theory calculations. These imply that the understanding of gas treatment gives us insight into improving the W ALD process for future memory devices. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1039/c8ra02622j |
| الاتاحة: | http://dx.doi.org/10.1039/c8ra02622j http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA02622J |
| Rights: | http://creativecommons.org/licenses/by/3.0/ |
| رقم الانضمام: | edsbas.8CC6F1EF |
| قاعدة البيانات: | BASE |
| DOI: | 10.1039/c8ra02622j |
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