Academic Journal
Vertical homo-junction In Ga As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade
| العنوان: | Vertical homo-junction In Ga As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade |
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| المؤلفون: | Baek, Ji-Min, Kim, Hyo-Jin, Yoo, Ji-Hoon, Shin, Ju-Won, Shin, Ki-Yong, Amir, Walid, Ju, Gunwu, Kim, Hyung-Jun, Oh, Joohee, Kim, Hyoungsub, Kim, Tae-Woo, Kim, Dae-Hyun |
| المساهمون: | National Research Foundation of Korea, Ministry of Science, ICT and Future Planning |
| المصدر: | Solid-State Electronics ; volume 197, page 108447 ; ISSN 0038-1101 |
| بيانات النشر: | Elsevier BV |
| سنة النشر: | 2022 |
| المجموعة: | ScienceDirect (Elsevier - Open Access Articles via Crossref) |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1016/j.sse.2022.108447 |
| الاتاحة: | http://dx.doi.org/10.1016/j.sse.2022.108447 https://api.elsevier.com/content/article/PII:S0038110122002180?httpAccept=text/xml https://api.elsevier.com/content/article/PII:S0038110122002180?httpAccept=text/plain |
| Rights: | https://www.elsevier.com/tdm/userlicense/1.0/ ; https://doi.org/10.15223/policy-017 ; https://doi.org/10.15223/policy-037 ; https://doi.org/10.15223/policy-012 ; https://doi.org/10.15223/policy-029 ; https://doi.org/10.15223/policy-004 |
| رقم الانضمام: | edsbas.8AEA0211 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1016/j.sse.2022.108447 |
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