Academic Journal
TEM characterization of GaSb grown on single crystal offcut Silicon (001)
العنوان: | TEM characterization of GaSb grown on single crystal offcut Silicon (001) |
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المؤلفون: | Porter, H. L., Steer, M. J., Craven, A. J., McGrouther, D., Thayne, I. G., MacLaren, I. |
المصدر: | Microscopy and Microanalysis ; volume 23, issue S1, page 1476-1477 ; ISSN 1431-9276 1435-8115 |
بيانات النشر: | Oxford University Press (OUP) |
سنة النشر: | 2017 |
مصطلحات موضوعية: | Instrumentation |
نوع الوثيقة: | article in journal/newspaper |
اللغة: | English |
DOI: | 10.1017/s1431927617008042 |
الاتاحة: | http://dx.doi.org/10.1017/s1431927617008042 https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1431927617008042 |
Rights: | https://www.cambridge.org/core/terms |
رقم الانضمام: | edsbas.878C6D66 |
قاعدة البيانات: | BASE |
DOI: | 10.1017/s1431927617008042 |
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