Image1_Structural and Transport Properties of 1T-VSe2 Single Crystal Under High Pressures.pdf

التفاصيل البيبلوغرافية
العنوان: Image1_Structural and Transport Properties of 1T-VSe2 Single Crystal Under High Pressures.pdf
المؤلفون: Dongqi Song (11050485), Ying Zhou (25031), Min Zhang (111999), Xinyi He (31219), Xinjian Li (459866)
سنة النشر: 2021
المجموعة: Smithsonian Institution: Digital Repository
مصطلحات موضوعية: Biomaterials, Construction Materials, Ceramics, Composite and Hybrid Materials, Functional Materials, Glass, Materials Engineering not elsewhere classified, Optical Properties of Materials, Synthesis of Materials, high pressure, transition metal chalcogenides, structural phase transition, charge density wave, electrical transport
الوصف: Two-dimensional transition metal dichalcogenide 1T-VSe 2 exhibits a unique three-dimensional charge density wave (CDW) order below ∼110 K at ambient pressure, which shows unusual evolution under pressure. Here we report on the high-pressure structural and transport properties of 1T-VSe 2 by extending the pressure up to 57.8 GPa, through electrical transport, synchrotron X-ray diffraction (XRD) and Raman scattering measurements, which unravel two critical pressure points. The CDW transition is found to be enhanced under compression at a rate of 16.5 K/GPa up to the first critical pressure P C1 ∼ 12 GPa, at which a structural phase transition from hexagonal P-3m1 to monoclinic C2/m phase takes place. The second critical pressure P C2 ∼ 33 GPa corresponds to another structural transition from monoclinic C2/m to P2 1 /m phase. These findings extend the phase diagram of pressurized 1T-VSe 2 and may help to understand pressure tuning of structures in transition metal dichalcogenides.
نوع الوثيقة: still image
اللغة: unknown
Relation: https://figshare.com/articles/figure/Image1_Structural_and_Transport_Properties_of_1T-VSe2_Single_Crystal_Under_High_Pressures_pdf/14881566
DOI: 10.3389/fmats.2021.710849.s001
الاتاحة: https://doi.org/10.3389/fmats.2021.710849.s001
Rights: CC BY 4.0
رقم الانضمام: edsbas.8532C8C4
قاعدة البيانات: BASE
الوصف
DOI:10.3389/fmats.2021.710849.s001