التفاصيل البيبلوغرافية
| العنوان: |
Exciton-induced lattice defect formation |
| المؤلفون: |
Savchenko, E.V., Ogurtsov, A.N., Zimmerer, G. |
| بيانات النشر: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| سنة النشر: |
2003 |
| المجموعة: |
Vernadsky National Library of Ukraine: DSpace |
| مصطلحات موضوعية: |
Electronically Induced Phenomena: Low Temperature Aspects |
| الوصف: |
The lattice defect formation in solid Ne induced by electronic excitation was studied using the selective vacuum ultraviolet spectroscopy method. The samples were excited with synchrotron radiation in the range of excitonic absorption n = 2Г(3/2). The dose dependence of the intensity distribution in the band of atomic type self-trapped exciton luminescence was analyzed. A direct evidence of the formation and accumulation of point lattice defects in solid Ne via the excitonic mechanism was obtained for the first time. The model of the permanent lattice defect formation is discussed. |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
English |
| تدمد: |
0132-6414 |
| Relation: |
Физика низких температур; Exciton-induced lattice defect formation / E.V. Savchenko, A.N. Ogurtsov, G. Zimmerer // Физика низких температур. — 2003. — Т. 29, № 3. — С. 356-360. — Бібліогр.: 26 назв. — англ.; PACS: 61.82.Ms, 71.35.-y, 78.55.Hx; http://dspace.nbuv.gov.ua/handle/123456789/128823 |
| الاتاحة: |
http://dspace.nbuv.gov.ua/handle/123456789/128823 |
| رقم الانضمام: |
edsbas.84EF4DF0 |
| قاعدة البيانات: |
BASE |