Academic Journal
Effect of In-Situ Silicon Carbon Nitride (SiCN) Cap Layer on Performances of AlGaN/GaN MISHFETs
| العنوان: | Effect of In-Situ Silicon Carbon Nitride (SiCN) Cap Layer on Performances of AlGaN/GaN MISHFETs |
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| المؤلفون: | Lee, Jae-Hoon, Im, Ki-Sik, Lee, Jung-Hee |
| المساهمون: | Civil-Military Technology Cooperation Program |
| المصدر: | IEEE Journal of the Electron Devices Society ; volume 9, page 728-734 ; ISSN 2168-6734 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE) |
| سنة النشر: | 2021 |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| DOI: | 10.1109/jeds.2021.3100760 |
| الاتاحة: | http://dx.doi.org/10.1109/jeds.2021.3100760 http://xplorestaging.ieee.org/ielx7/6245494/9359727/09499231.pdf?arnumber=9499231 |
| Rights: | https://creativecommons.org/licenses/by/4.0/legalcode |
| رقم الانضمام: | edsbas.848D9A22 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1109/jeds.2021.3100760 |
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