Academic Journal
Thermal stability and structure of the equilibrium clean Si(103) surface
| العنوان: | Thermal stability and structure of the equilibrium clean Si(103) surface |
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| المؤلفون: | Gai, Z, Yang, WS, Zhao, RG, Sakurai, T |
| المساهمون: | Yang, WS (reprint author), Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan., Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan., Beijing Univ, Dept Phys, Beijing 100871, Peoples R China., Beijing Univ, Lab Mesoscop Phys, Beijing 100871, Peoples R China. |
| المصدر: | SCI |
| بيانات النشر: | physical review b |
| سنة النشر: | 1999 |
| المجموعة: | Peking University Institutional Repository (PKU IR) / 北京大学机构知识库 |
| مصطلحات موضوعية: | ORIENTATIONAL PHASE-DIAGRAM, MILLER INDEX SURFACES, SCANNING TUNNELING MICROSCOPY, STEPPED SI(113) SURFACES, ATOMIC-STRUCTURE, SILICON SURFACES, GE SURFACES, ENERGY, RECONSTRUCTIONS, TRICRITICALITY |
| الوصف: | The Si(103) surface is studied by means of low-energy electron diffraction and scanning tunneling microscopy. It has been found that the clean Si(103) surface is stable against faceting, that at the room temperature the thermally equilibrium clean Si(103) surface is, surprisingly, rough but semiconducting and its topmost thin layer is disordered, and that the rough morphology is not a result of the thermodynamic roughening transition but because it has a lower internal energy than that of the flat surface. That Si(103) neither facets to Si(113) facets nor consists of Si(113) nanofacets indicates that it does not belong to the Si(113) family; in contrast, Ge(103) does belong to the Ge(113) family. This difference supports the conclusion that the atomic structure of the Ge(113) surface is different from that of the Si(113) surface. [S0163-1829(99)03020-9]. ; Physics, Condensed Matter ; SCI(E) ; 15 ; ARTICLE ; 20 ; 13003-13008 ; 59 |
| نوع الوثيقة: | journal/newspaper |
| اللغة: | English |
| تدمد: | 1098-0121 1550-235X |
| Relation: | PHYSICAL REVIEW B.1999,59,(20),13003-13008.; 1022553; http://hdl.handle.net/20.500.11897/401573; WOS:000080571000042 |
| DOI: | 10.1103/PhysRevB.59.13003 |
| الاتاحة: | https://hdl.handle.net/20.500.11897/401573 https://doi.org/10.1103/PhysRevB.59.13003 |
| رقم الانضمام: | edsbas.844E2218 |
| قاعدة البيانات: | BASE |
| تدمد: | 10980121 1550235X |
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| DOI: | 10.1103/PhysRevB.59.13003 |