التفاصيل البيبلوغرافية
| العنوان: |
Disruptive ultra-low-leakage design techniques for ultra-low-power CMOS circuits |
| المؤلفون: |
Flandre, Denis, Bulteel, Olivier, Gosset, Geoffroy, Haddad, Pierre-Antoine, Bernard, Sébastien, Rue, Bertrand, Bol, David, CMOS Emerging Technologies Conference |
| المساهمون: |
UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique |
| سنة النشر: |
2012 |
| المجموعة: |
DIAL@USL-B (Université Saint-Louis, Bruxelles) |
| مصطلحات موضوعية: |
CMOS |
| الوصف: |
We introduce a disruptive ultra-low-leakage design technique, based on a pair of source-connected n- and p-MOSFETs, auto-biasing the stand-by gate-to-source voltage of the nMOSFET at negative voltage and that of the p-device at positive, thereby pushing the off current of analog and digital functions towards its physical limits, without reducing functional performance. Therefrom, we designed ultra-low-power basic blocks (2-terminal diode, 3-terminal transistor, voltage follower), circuits (7-transistor SRAM and MTCMOS latch with record low leakage but still high speed), as well as microsystems (e.g. high-frequency power-management units for RF and PV energy harvesting and micro
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| نوع الوثيقة: |
conference object |
| اللغة: |
English |
| Relation: |
boreal:129374; http://hdl.handle.net/2078.1/129374 |
| الاتاحة: |
http://hdl.handle.net/2078.1/129374 |
| رقم الانضمام: |
edsbas.840AE8DD |
| قاعدة البيانات: |
BASE |