Threshold voltage modulation of AlGaN/GaN MIS-FinFETs with sub-60 mV/decade subthreshold swing

التفاصيل البيبلوغرافية
العنوان: Threshold voltage modulation of AlGaN/GaN MIS-FinFETs with sub-60 mV/decade subthreshold swing
المؤلفون: Dai, Quan, Kim, Ryun-Hwi, Lee, Jun-Hyeok, Kim, Jeong-Gil, Thingujam, Terirama, Kang, Seung-Hyeon, Ahn, Woo-Hyun, Kim, Eun-Jin, Lee, Jung-Hee
المصدر: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
بيانات النشر: IEEE
سنة النشر: 2020
نوع الوثيقة: conference object
اللغة: unknown
DOI: 10.1109/eurosoi-ulis49407.2020.9365447
الاتاحة: http://dx.doi.org/10.1109/eurosoi-ulis49407.2020.9365447
http://xplorestaging.ieee.org/ielx7/9365069/9365279/09365447.pdf?arnumber=9365447
Rights: https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html ; https://doi.org/10.15223/policy-029 ; https://doi.org/10.15223/policy-037
رقم الانضمام: edsbas.83CC0C42
قاعدة البيانات: BASE
الوصف
DOI:10.1109/eurosoi-ulis49407.2020.9365447